JPS57112084A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS57112084A
JPS57112084A JP55187345A JP18734580A JPS57112084A JP S57112084 A JPS57112084 A JP S57112084A JP 55187345 A JP55187345 A JP 55187345A JP 18734580 A JP18734580 A JP 18734580A JP S57112084 A JPS57112084 A JP S57112084A
Authority
JP
Japan
Prior art keywords
layer
multiplication
inp
junction
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55187345A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328349B2 (enrdf_load_stackoverflow
Inventor
Tatsuaki Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187345A priority Critical patent/JPS57112084A/ja
Publication of JPS57112084A publication Critical patent/JPS57112084A/ja
Publication of JPS6328349B2 publication Critical patent/JPS6328349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP55187345A 1980-12-29 1980-12-29 Avalanche photodiode Granted JPS57112084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187345A JPS57112084A (en) 1980-12-29 1980-12-29 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187345A JPS57112084A (en) 1980-12-29 1980-12-29 Avalanche photodiode

Publications (2)

Publication Number Publication Date
JPS57112084A true JPS57112084A (en) 1982-07-12
JPS6328349B2 JPS6328349B2 (enrdf_load_stackoverflow) 1988-06-08

Family

ID=16204366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187345A Granted JPS57112084A (en) 1980-12-29 1980-12-29 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS57112084A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840916A (en) * 1984-05-31 1989-06-20 Fujitsu Limited Process for fabricating an avalanche photodiode
US4906583A (en) * 1984-12-22 1990-03-06 Fujitsu Limited Making a semiconductor photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840916A (en) * 1984-05-31 1989-06-20 Fujitsu Limited Process for fabricating an avalanche photodiode
US4906583A (en) * 1984-12-22 1990-03-06 Fujitsu Limited Making a semiconductor photodetector

Also Published As

Publication number Publication date
JPS6328349B2 (enrdf_load_stackoverflow) 1988-06-08

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