JPS6457765A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS6457765A
JPS6457765A JP62214207A JP21420787A JPS6457765A JP S6457765 A JPS6457765 A JP S6457765A JP 62214207 A JP62214207 A JP 62214207A JP 21420787 A JP21420787 A JP 21420787A JP S6457765 A JPS6457765 A JP S6457765A
Authority
JP
Japan
Prior art keywords
layer
multiplying
type
superlattice
optical absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62214207A
Other languages
Japanese (ja)
Inventor
Takashi Mikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62214207A priority Critical patent/JPS6457765A/en
Publication of JPS6457765A publication Critical patent/JPS6457765A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce the noise and to accelerate the speed of an APD(Avalanche Photodiode) by employing GaInAs having specific impurity concentration or less as the absorption layer of the APD, eliminating the avalanche multiplication of carrier by this layer, and implanting only electrons to a superlattice multiplying layer. CONSTITUTION:An n-type superlattice (n-type AlInAs/GaInAs) 2 as a multiplying layer, an n-type GaInAs layer 3 as an optical absorption layer and an n-type InP layer 4 as an optical transmitting layer are sequentially grown on an n<+> type InP substrate 1, and Zn or Cd is so diffused as p-type impurity from the surface of the layer 4 as to arrive at the layer 3 to form a p<+> type region 5. When a multiplying electric field is represented by Em and n-type impurity concentration is represented by N, the Em of the optical absorption is larger than that of the superlattice multiplying layer at N=2X10<16>cm<-3> or less, and it is reversed at 2X10<16>cm<-3> or more. The superlattice multiplying layer has Em=1.5X10<5>Vcm<-1> at N=2X10<16>cm<-3>, Accordingly, when the impurity concentration of the optical absorption layer is set to 2X10<16>cm<-3> or less, its avalanche multiplication can be mainly performed only by the superlattice multiplying layer, and only electrons are implanted from the optical absorption layer to the superlattice multiplying layer.
JP62214207A 1987-08-28 1987-08-28 Semiconductor photodetector Pending JPS6457765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62214207A JPS6457765A (en) 1987-08-28 1987-08-28 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62214207A JPS6457765A (en) 1987-08-28 1987-08-28 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6457765A true JPS6457765A (en) 1989-03-06

Family

ID=16652005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62214207A Pending JPS6457765A (en) 1987-08-28 1987-08-28 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6457765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894829A (en) * 1981-12-02 1983-06-06 オリンパス光学工業株式会社 Light source apparatus of endoscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894829A (en) * 1981-12-02 1983-06-06 オリンパス光学工業株式会社 Light source apparatus of endoscope

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