JPS57111023A - Etching method for integrated circuit - Google Patents

Etching method for integrated circuit

Info

Publication number
JPS57111023A
JPS57111023A JP18694480A JP18694480A JPS57111023A JP S57111023 A JPS57111023 A JP S57111023A JP 18694480 A JP18694480 A JP 18694480A JP 18694480 A JP18694480 A JP 18694480A JP S57111023 A JPS57111023 A JP S57111023A
Authority
JP
Japan
Prior art keywords
nichrome
film
aqueous solution
ammonium nitrate
perchloric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18694480A
Other languages
English (en)
Other versions
JPS6347139B2 (ja
Inventor
Tetsuo Kurokawa
Nobuo Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18694480A priority Critical patent/JPS57111023A/ja
Publication of JPS57111023A publication Critical patent/JPS57111023A/ja
Publication of JPS6347139B2 publication Critical patent/JPS6347139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP18694480A 1980-12-26 1980-12-26 Etching method for integrated circuit Granted JPS57111023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18694480A JPS57111023A (en) 1980-12-26 1980-12-26 Etching method for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18694480A JPS57111023A (en) 1980-12-26 1980-12-26 Etching method for integrated circuit

Publications (2)

Publication Number Publication Date
JPS57111023A true JPS57111023A (en) 1982-07-10
JPS6347139B2 JPS6347139B2 (ja) 1988-09-20

Family

ID=16197448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18694480A Granted JPS57111023A (en) 1980-12-26 1980-12-26 Etching method for integrated circuit

Country Status (1)

Country Link
JP (1) JPS57111023A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112048719A (zh) * 2020-08-27 2020-12-08 江苏中德电子材料科技有限公司 铬金属蚀刻液以及蚀刻铬膜、铬镍膜的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230366A (ja) * 1987-03-18 1988-09-26 Nippon Denki Sanei Kk ドツト式感熱記録装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112048719A (zh) * 2020-08-27 2020-12-08 江苏中德电子材料科技有限公司 铬金属蚀刻液以及蚀刻铬膜、铬镍膜的方法

Also Published As

Publication number Publication date
JPS6347139B2 (ja) 1988-09-20

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