JPS57109371A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57109371A JPS57109371A JP55184052A JP18405280A JPS57109371A JP S57109371 A JPS57109371 A JP S57109371A JP 55184052 A JP55184052 A JP 55184052A JP 18405280 A JP18405280 A JP 18405280A JP S57109371 A JPS57109371 A JP S57109371A
- Authority
- JP
- Japan
- Prior art keywords
- mask layer
- crystal silicon
- emitter
- oxide film
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Weting (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55184052A JPS57109371A (en) | 1980-12-26 | 1980-12-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55184052A JPS57109371A (en) | 1980-12-26 | 1980-12-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57109371A true JPS57109371A (en) | 1982-07-07 |
JPH0154864B2 JPH0154864B2 (enrdf_load_stackoverflow) | 1989-11-21 |
Family
ID=16146526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55184052A Granted JPS57109371A (en) | 1980-12-26 | 1980-12-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57109371A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101470B2 (ja) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515230A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacturing method |
-
1980
- 1980-12-26 JP JP55184052A patent/JPS57109371A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515230A (en) * | 1978-07-19 | 1980-02-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacturing method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06101470B2 (ja) * | 1984-02-03 | 1994-12-12 | アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド | スロット内に形成されたバイポーラトランジスタからなる能動要素を有する集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0154864B2 (enrdf_load_stackoverflow) | 1989-11-21 |
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