JPS57109328A - Ion beam patterning method - Google Patents

Ion beam patterning method

Info

Publication number
JPS57109328A
JPS57109328A JP18372480A JP18372480A JPS57109328A JP S57109328 A JPS57109328 A JP S57109328A JP 18372480 A JP18372480 A JP 18372480A JP 18372480 A JP18372480 A JP 18372480A JP S57109328 A JPS57109328 A JP S57109328A
Authority
JP
Japan
Prior art keywords
ion beam
exposure
photoresist
ion
patterning method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18372480A
Other languages
English (en)
Inventor
Shigeru Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18372480A priority Critical patent/JPS57109328A/ja
Publication of JPS57109328A publication Critical patent/JPS57109328A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP18372480A 1980-12-26 1980-12-26 Ion beam patterning method Pending JPS57109328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18372480A JPS57109328A (en) 1980-12-26 1980-12-26 Ion beam patterning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18372480A JPS57109328A (en) 1980-12-26 1980-12-26 Ion beam patterning method

Publications (1)

Publication Number Publication Date
JPS57109328A true JPS57109328A (en) 1982-07-07

Family

ID=16140847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18372480A Pending JPS57109328A (en) 1980-12-26 1980-12-26 Ion beam patterning method

Country Status (1)

Country Link
JP (1) JPS57109328A (ja)

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