JPS57173941A - Formation of positive type photo resist pattern - Google Patents
Formation of positive type photo resist patternInfo
- Publication number
- JPS57173941A JPS57173941A JP5909181A JP5909181A JPS57173941A JP S57173941 A JPS57173941 A JP S57173941A JP 5909181 A JP5909181 A JP 5909181A JP 5909181 A JP5909181 A JP 5909181A JP S57173941 A JPS57173941 A JP S57173941A
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- ultraviolet rays
- formation
- positive type
- photo resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To improve the resolution and heat resistance of a resist pattern by a method wherein a film consisting of a polymer containing acrylic acid and a compound of O-quinone azide is formed on a substrate, and after pattern irradiation is performed, heat treatment is performed and development is performed. CONSTITUTION:The film formed of the photo sensitive compound consisting of the polymer containing 10% or more of acrylic acid or methacrylic acid in molar fraction and the compound of O-quinone azide is formed on the substrate. Then pattern irradiation is performed using ultraviolet rays or far ultraviolet rays. Then after heat treatment is performed at 100-130 deg.C, development is performed according to the usual method. Accordingly the resist pattern is formed through the separated processes of photolysis using irradiation of ultraviolet rays and the reaction by heating, and high resolution can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5909181A JPS57173941A (en) | 1981-04-21 | 1981-04-21 | Formation of positive type photo resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5909181A JPS57173941A (en) | 1981-04-21 | 1981-04-21 | Formation of positive type photo resist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57173941A true JPS57173941A (en) | 1982-10-26 |
Family
ID=13103315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5909181A Pending JPS57173941A (en) | 1981-04-21 | 1981-04-21 | Formation of positive type photo resist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57173941A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235131A (en) * | 1984-05-08 | 1985-11-21 | Fujitsu Ltd | Formation of pattern |
JPH02971A (en) * | 1988-02-26 | 1990-01-05 | Mitsubishi Electric Corp | Formation of resist pattern |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4957055A (en) * | 1972-06-12 | 1974-06-03 |
-
1981
- 1981-04-21 JP JP5909181A patent/JPS57173941A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4957055A (en) * | 1972-06-12 | 1974-06-03 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235131A (en) * | 1984-05-08 | 1985-11-21 | Fujitsu Ltd | Formation of pattern |
JPH02971A (en) * | 1988-02-26 | 1990-01-05 | Mitsubishi Electric Corp | Formation of resist pattern |
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