JPS57173941A - Formation of positive type photo resist pattern - Google Patents

Formation of positive type photo resist pattern

Info

Publication number
JPS57173941A
JPS57173941A JP5909181A JP5909181A JPS57173941A JP S57173941 A JPS57173941 A JP S57173941A JP 5909181 A JP5909181 A JP 5909181A JP 5909181 A JP5909181 A JP 5909181A JP S57173941 A JPS57173941 A JP S57173941A
Authority
JP
Japan
Prior art keywords
resist pattern
ultraviolet rays
formation
positive type
photo resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5909181A
Other languages
Japanese (ja)
Inventor
Yoshio Yamashita
Mitsumasa Kunishi
Takaharu Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP5909181A priority Critical patent/JPS57173941A/en
Publication of JPS57173941A publication Critical patent/JPS57173941A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve the resolution and heat resistance of a resist pattern by a method wherein a film consisting of a polymer containing acrylic acid and a compound of O-quinone azide is formed on a substrate, and after pattern irradiation is performed, heat treatment is performed and development is performed. CONSTITUTION:The film formed of the photo sensitive compound consisting of the polymer containing 10% or more of acrylic acid or methacrylic acid in molar fraction and the compound of O-quinone azide is formed on the substrate. Then pattern irradiation is performed using ultraviolet rays or far ultraviolet rays. Then after heat treatment is performed at 100-130 deg.C, development is performed according to the usual method. Accordingly the resist pattern is formed through the separated processes of photolysis using irradiation of ultraviolet rays and the reaction by heating, and high resolution can be obtained.
JP5909181A 1981-04-21 1981-04-21 Formation of positive type photo resist pattern Pending JPS57173941A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5909181A JPS57173941A (en) 1981-04-21 1981-04-21 Formation of positive type photo resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5909181A JPS57173941A (en) 1981-04-21 1981-04-21 Formation of positive type photo resist pattern

Publications (1)

Publication Number Publication Date
JPS57173941A true JPS57173941A (en) 1982-10-26

Family

ID=13103315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5909181A Pending JPS57173941A (en) 1981-04-21 1981-04-21 Formation of positive type photo resist pattern

Country Status (1)

Country Link
JP (1) JPS57173941A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235131A (en) * 1984-05-08 1985-11-21 Fujitsu Ltd Formation of pattern
JPH02971A (en) * 1988-02-26 1990-01-05 Mitsubishi Electric Corp Formation of resist pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957055A (en) * 1972-06-12 1974-06-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4957055A (en) * 1972-06-12 1974-06-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60235131A (en) * 1984-05-08 1985-11-21 Fujitsu Ltd Formation of pattern
JPH02971A (en) * 1988-02-26 1990-01-05 Mitsubishi Electric Corp Formation of resist pattern

Similar Documents

Publication Publication Date Title
IL76702A (en) Process of forming a negative pattern in a photoresist layer
KR850002672A (en) Template manufacturing method using plasma developing layer
JPS5511217A (en) Pattern forming method using radiation sensitive high polymer
JPS57173941A (en) Formation of positive type photo resist pattern
EP0152114A3 (en) Method for making a dry planographic printing plate
JPS5532088A (en) Photo mask forming method
JPS6452142A (en) Pattern forming process and silylating apparatus
JPS5216865A (en) Purifying waste water containing organisms
JPS57160127A (en) Manufacture of transcribe mask for x-ray exposure
JPS53127723A (en) Image formation method
JPS5636648A (en) Photosensitive material and pattern forming method using it
JPS5299072A (en) Mask for x-ray exposure
JPS5726170A (en) Formation of al or al alloy pattern
JPS5742043A (en) Photosensitive material
JPS57211144A (en) Formation of micropattern
ES480802A1 (en) Lithographic resist and device processing utilizing same.
JPS5655943A (en) Pattern forming method
JPS53142171A (en) Manufacture of semiconductor element
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5448485A (en) Photo etching method
JPS56107241A (en) Dry etching method
JPS5512921A (en) Photoengraving process
JPS6423535A (en) Hardening of photoresist pattern
JPS53135844A (en) Photochemical etching procee
JPS56114942A (en) High energy beam sensitive resist material and its using method