JPS57109191A - Polysilicon fuse memory - Google Patents
Polysilicon fuse memoryInfo
- Publication number
- JPS57109191A JPS57109191A JP18431280A JP18431280A JPS57109191A JP S57109191 A JPS57109191 A JP S57109191A JP 18431280 A JP18431280 A JP 18431280A JP 18431280 A JP18431280 A JP 18431280A JP S57109191 A JPS57109191 A JP S57109191A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- write
- oxygen ions
- fuse memory
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 6
- 229920005591 polysilicon Polymers 0.000 title abstract 6
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- -1 oxygen ions Chemical class 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To make minuaturize a write-in driver transistor and to enable write-in with a less power, by implanting elements forming isolator in ion-state in response to silicon in polysilicon. CONSTITUTION:A polysilicon 1 including phosphor loaded on an oxide film 2 formed on the surface of a silicon substrate 3 is taken as material and an oxygen ions 4 are implanted. Next, the polysilicon 1 is etched on a flat shape and aluminum electrodes 5 are located at both sides. The oxygen ions 4 implanted in the region where the temperature is highest in the polysilicon 1 are activated, and amorphous polysilicon 1 is restored and forms an oxideregion 6 in connection with the oxygen ions 4. Thus, a resistance between the electrodes 5, 5' is very large and the write-in of the fuse memory is achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18431280A JPS57109191A (en) | 1980-12-25 | 1980-12-25 | Polysilicon fuse memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18431280A JPS57109191A (en) | 1980-12-25 | 1980-12-25 | Polysilicon fuse memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57109191A true JPS57109191A (en) | 1982-07-07 |
Family
ID=16151130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18431280A Pending JPS57109191A (en) | 1980-12-25 | 1980-12-25 | Polysilicon fuse memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57109191A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741731A (en) * | 1994-12-19 | 1998-04-21 | Yamaha Corporation | Semiconductor device wired with fuse |
| US7923307B2 (en) * | 2007-12-27 | 2011-04-12 | Hynix Semiconductor Inc. | Semiconductor device with fuse and method for fabricating the same |
-
1980
- 1980-12-25 JP JP18431280A patent/JPS57109191A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5741731A (en) * | 1994-12-19 | 1998-04-21 | Yamaha Corporation | Semiconductor device wired with fuse |
| US7923307B2 (en) * | 2007-12-27 | 2011-04-12 | Hynix Semiconductor Inc. | Semiconductor device with fuse and method for fabricating the same |
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