JPS57107054A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57107054A JPS57107054A JP18422880A JP18422880A JPS57107054A JP S57107054 A JPS57107054 A JP S57107054A JP 18422880 A JP18422880 A JP 18422880A JP 18422880 A JP18422880 A JP 18422880A JP S57107054 A JPS57107054 A JP S57107054A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- electrode
- regist
- whole surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent breaking of a staged part by thickening of an Al film thickness at a staged part, by a method wherein an Al layer is adhered to a whole surface of a substrate whereon an element region is formed, and after a region except an electrode wiring part is anodic-oxidated, the whole surface is irradiated with energy beam. CONSTITUTION:In a process to manufacture an electrode of an MOSFET, a regist mask 5 is masked to form a gate electrode 4, and after impurity is poured to a source region 6 and drain region 7, the regist film 5 is removed to vacuum- evaporate an Al film to the whole surface. A regist pattern 9 is formed on an Al film 8 of an electrode wiring region, and the Al film at other region is anodic-oxidated to form an alumina film 10. Then, after the resist is removed, for example, the total surface is scanned and irradiated with laser beam to fuse the Al film 8 on a staged part to thicken a thin part into a gentle slope. This permits the prevention of breaking of an electrode at a staged part and enables the improvement of contact with the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18422880A JPS57107054A (en) | 1980-12-25 | 1980-12-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18422880A JPS57107054A (en) | 1980-12-25 | 1980-12-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57107054A true JPS57107054A (en) | 1982-07-03 |
Family
ID=16149609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18422880A Pending JPS57107054A (en) | 1980-12-25 | 1980-12-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57107054A (en) |
-
1980
- 1980-12-25 JP JP18422880A patent/JPS57107054A/en active Pending
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