JPS57104852A - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
JPS57104852A
JPS57104852A JP55181297A JP18129780A JPS57104852A JP S57104852 A JPS57104852 A JP S57104852A JP 55181297 A JP55181297 A JP 55181297A JP 18129780 A JP18129780 A JP 18129780A JP S57104852 A JPS57104852 A JP S57104852A
Authority
JP
Japan
Prior art keywords
sensor
film
concavity
filled
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55181297A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135511B2 (enExample
Inventor
Yoshitaka Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP55181297A priority Critical patent/JPS57104852A/ja
Publication of JPS57104852A publication Critical patent/JPS57104852A/ja
Publication of JPS6135511B2 publication Critical patent/JPS6135511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP55181297A 1980-12-23 1980-12-23 Semiconductor sensor Granted JPS57104852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181297A JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181297A JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Publications (2)

Publication Number Publication Date
JPS57104852A true JPS57104852A (en) 1982-06-30
JPS6135511B2 JPS6135511B2 (enExample) 1986-08-13

Family

ID=16098211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181297A Granted JPS57104852A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS57104852A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243862A (ja) * 1987-03-31 1988-10-11 Shimadzu Corp 集積化センサおよびその製造法
FR2666930A1 (fr) * 1990-09-14 1992-03-20 Lyon Ecole Centrale Procede et realisation d'une surface-grille d'un capteur electrochimique integre, constitue d'un transistor a effet de champ et sensible aux especes alcalino-terreuses et capteur obtenu.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63243862A (ja) * 1987-03-31 1988-10-11 Shimadzu Corp 集積化センサおよびその製造法
FR2666930A1 (fr) * 1990-09-14 1992-03-20 Lyon Ecole Centrale Procede et realisation d'une surface-grille d'un capteur electrochimique integre, constitue d'un transistor a effet de champ et sensible aux especes alcalino-terreuses et capteur obtenu.

Also Published As

Publication number Publication date
JPS6135511B2 (enExample) 1986-08-13

Similar Documents

Publication Publication Date Title
SE7603229L (sv) Kemiskt paverkbar givare
JPS5635443A (en) Semiconductor device
JPS5688363A (en) Field effect transistor
EP0307973A3 (en) An isfet chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS57104852A (en) Semiconductor sensor
JPS5633881A (en) Manufacture of semiconductor device
JPS51128278A (en) Integrated circuit with resistance element
JPS645075A (en) Semiconductor pressure sensor and manufacture of the same
JPS5524603A (en) Chemically responsive element and production thereof
JPS6450465A (en) Semiconductor device
JPS5679245A (en) Ion sensor
JPS5734373A (en) Silicon diaphragm
JPS5475273A (en) Manufacture of semiconductor device
JPS5713769A (en) Semiconductor device and manufacture thereof
JPS55158553A (en) Ion sensor
JPS5779670A (en) Manufacture of semiconductor device
JPS52136583A (en) Mos type semiconductor device
JPS5752150A (en) Semiconductor device with element forming region surrounded by porous silicon oxide
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5654069A (en) High withstand voltage mos field-effect semiconductor device
JPS5354968A (en) Semiconductor device
JPS57114287A (en) Semiconductor device
JPS5678157A (en) Semiconductor device
JPS5682441A (en) Ion concentration measuring method