JPS5682441A - Ion concentration measuring method - Google Patents

Ion concentration measuring method

Info

Publication number
JPS5682441A
JPS5682441A JP16006379A JP16006379A JPS5682441A JP S5682441 A JPS5682441 A JP S5682441A JP 16006379 A JP16006379 A JP 16006379A JP 16006379 A JP16006379 A JP 16006379A JP S5682441 A JPS5682441 A JP S5682441A
Authority
JP
Japan
Prior art keywords
ion
conjugated
electrodes
selective
responds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16006379A
Other languages
Japanese (ja)
Other versions
JPS6051661B2 (en
Inventor
Shotaro Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP54160063A priority Critical patent/JPS6051661B2/en
Publication of JPS5682441A publication Critical patent/JPS5682441A/en
Publication of JPS6051661B2 publication Critical patent/JPS6051661B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To analyze a sample of slight volume without using reference electrode by allowing ion selective electrodes responding to each of conjugated ion pairs if any to allow to contact with a same sample liquid and measuring the potential difference between both electrodes.
CONSTITUTION: In the measurement of conjugated ion pairs such as, H+ and OH-, in which the product of both ion densities are constant, the ion selective (IS)FETs, each of which is formed with a selective ion sensitive film I on the insulation layer L of the channel part C of a field effect transistor (FET) and is formed with the source S and drain D made into n type by respectively diffusing P into a p type silicon chip Si, are used. The ISFET-T1 which responds to one of the conjugated ions and the T2 which responds to the other are formed on a common silicon chip. The T1, T2 are constituted of gates G1, G2, a common drain D, and the sources S1, S2 respectively connected to source follower resistances R1, R2. In this way, no reference electrodes are required and the device is miniaturized.
COPYRIGHT: (C)1981,JPO&Japio
JP54160063A 1979-12-10 1979-12-10 Ion concentration measurement method Expired JPS6051661B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54160063A JPS6051661B2 (en) 1979-12-10 1979-12-10 Ion concentration measurement method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54160063A JPS6051661B2 (en) 1979-12-10 1979-12-10 Ion concentration measurement method

Publications (2)

Publication Number Publication Date
JPS5682441A true JPS5682441A (en) 1981-07-06
JPS6051661B2 JPS6051661B2 (en) 1985-11-15

Family

ID=15707089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54160063A Expired JPS6051661B2 (en) 1979-12-10 1979-12-10 Ion concentration measurement method

Country Status (1)

Country Link
JP (1) JPS6051661B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298151A (en) * 1987-05-29 1988-12-05 Shindengen Electric Mfg Co Ltd Measuring circuit of ion sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298151A (en) * 1987-05-29 1988-12-05 Shindengen Electric Mfg Co Ltd Measuring circuit of ion sensor

Also Published As

Publication number Publication date
JPS6051661B2 (en) 1985-11-15

Similar Documents

Publication Publication Date Title
US4397714A (en) System for measuring the concentration of chemical substances
SE7603229L (en) CHEMICAL PAVABLE SENSOR
JPS5639454A (en) Chemical suybstance detector by using chemical sensitive element with structure of insulated-gate field-effect transistor
JPS5323577A (en) Complementary type insulated gate effect transistor
EP0307973A3 (en) An isfet chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid
DE3582757D1 (en) GAS DETECTOR.
JPS5682441A (en) Ion concentration measuring method
JPS5713764A (en) Charge detector
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS6476036A (en) Thin film transistor panel
JPS54136275A (en) Field effect transistor of isolation gate
JPS5626471A (en) Mos type semiconductor device
JPS56105665A (en) Semiconductor memory device
JPS5793247A (en) Ion measuring device
JPS6476035A (en) Manufacture of tft panel
JPS5682440A (en) Ion concentration measuring device
JPS5693368A (en) Mis transistor device
JPS57138177A (en) Charge transfer device
JPS5626243A (en) Flow cell
JPS5713765A (en) Insulated gate type field effect transistor and manufacture thereof
JPS5582460A (en) Negative resistance semiconductor element
JPS5513944A (en) C-mos semiconductor device
JPS57176595A (en) E-prom write-in circuit
JPS5338945A (en) Multiplication circuit containing field-effect transistor
JPS57208176A (en) Semiconductor negative resistance element