JPS5682440A - Ion concentration measuring device - Google Patents
Ion concentration measuring deviceInfo
- Publication number
- JPS5682440A JPS5682440A JP16006279A JP16006279A JPS5682440A JP S5682440 A JPS5682440 A JP S5682440A JP 16006279 A JP16006279 A JP 16006279A JP 16006279 A JP16006279 A JP 16006279A JP S5682440 A JPS5682440 A JP S5682440A
- Authority
- JP
- Japan
- Prior art keywords
- isfets
- forming
- amplifier
- slider
- input terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To measure ion concn. with good accuracy without reference electrode by using ion sensitive (IS)FETs of the same kind in a pair.
CONSTITUTION: The ISFET is made by diffusing phophorus on a p type silicon chip P to make source S and drain D of n type, forming an insulation layer I of SiO2 on the surface, and forming a gate part G by thinning the layer I and forming an alumino silicate layer A thereon. A pair of the ISFETs T1, T2 with the common drain D are formed on the same chip. The gates G1, G2 of the ISFETs are allowed to contact directly with a sample soln. The output currents of the ISFETs are converted to voltage signals by source follower resistances R1, R2, which R1 is connected to one input terminal of a differential amplifier 4, and the slider 5 of R2 to the other input terminal of the amplifier 4. A suitable difference is given to the overall sensitivities of the two ISFETs by moving the slider 5, whereby the signal proportional to the logarithm of the activity of the target ions is obtainable in the output of the amplifier 4. In this way, the sample inserting part is exceedingly miniaturized, and this is suited for measurement of microsamples.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54160062A JPS6044617B2 (en) | 1979-12-10 | 1979-12-10 | Ion concentration measuring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54160062A JPS6044617B2 (en) | 1979-12-10 | 1979-12-10 | Ion concentration measuring device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5682440A true JPS5682440A (en) | 1981-07-06 |
JPS6044617B2 JPS6044617B2 (en) | 1985-10-04 |
Family
ID=15707071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54160062A Expired JPS6044617B2 (en) | 1979-12-10 | 1979-12-10 | Ion concentration measuring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6044617B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716448A (en) * | 1985-09-03 | 1987-12-29 | Kelly Kevin A | CHEMFET operation without a reference electrode |
JP2012252008A (en) * | 2011-06-06 | 2012-12-20 | Robert Bosch Gmbh | Method and device for calculating measurement value of chemical sensitivity field effect transistor |
-
1979
- 1979-12-10 JP JP54160062A patent/JPS6044617B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716448A (en) * | 1985-09-03 | 1987-12-29 | Kelly Kevin A | CHEMFET operation without a reference electrode |
JP2012252008A (en) * | 2011-06-06 | 2012-12-20 | Robert Bosch Gmbh | Method and device for calculating measurement value of chemical sensitivity field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6044617B2 (en) | 1985-10-04 |
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