JPS5682440A - Ion concentration measuring device - Google Patents

Ion concentration measuring device

Info

Publication number
JPS5682440A
JPS5682440A JP16006279A JP16006279A JPS5682440A JP S5682440 A JPS5682440 A JP S5682440A JP 16006279 A JP16006279 A JP 16006279A JP 16006279 A JP16006279 A JP 16006279A JP S5682440 A JPS5682440 A JP S5682440A
Authority
JP
Japan
Prior art keywords
isfets
forming
amplifier
slider
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16006279A
Other languages
Japanese (ja)
Other versions
JPS6044617B2 (en
Inventor
Shotaro Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP54160062A priority Critical patent/JPS6044617B2/en
Publication of JPS5682440A publication Critical patent/JPS5682440A/en
Publication of JPS6044617B2 publication Critical patent/JPS6044617B2/en
Expired legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To measure ion concn. with good accuracy without reference electrode by using ion sensitive (IS)FETs of the same kind in a pair.
CONSTITUTION: The ISFET is made by diffusing phophorus on a p type silicon chip P to make source S and drain D of n type, forming an insulation layer I of SiO2 on the surface, and forming a gate part G by thinning the layer I and forming an alumino silicate layer A thereon. A pair of the ISFETs T1, T2 with the common drain D are formed on the same chip. The gates G1, G2 of the ISFETs are allowed to contact directly with a sample soln. The output currents of the ISFETs are converted to voltage signals by source follower resistances R1, R2, which R1 is connected to one input terminal of a differential amplifier 4, and the slider 5 of R2 to the other input terminal of the amplifier 4. A suitable difference is given to the overall sensitivities of the two ISFETs by moving the slider 5, whereby the signal proportional to the logarithm of the activity of the target ions is obtainable in the output of the amplifier 4. In this way, the sample inserting part is exceedingly miniaturized, and this is suited for measurement of microsamples.
COPYRIGHT: (C)1981,JPO&Japio
JP54160062A 1979-12-10 1979-12-10 Ion concentration measuring device Expired JPS6044617B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54160062A JPS6044617B2 (en) 1979-12-10 1979-12-10 Ion concentration measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54160062A JPS6044617B2 (en) 1979-12-10 1979-12-10 Ion concentration measuring device

Publications (2)

Publication Number Publication Date
JPS5682440A true JPS5682440A (en) 1981-07-06
JPS6044617B2 JPS6044617B2 (en) 1985-10-04

Family

ID=15707071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54160062A Expired JPS6044617B2 (en) 1979-12-10 1979-12-10 Ion concentration measuring device

Country Status (1)

Country Link
JP (1) JPS6044617B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716448A (en) * 1985-09-03 1987-12-29 Kelly Kevin A CHEMFET operation without a reference electrode
JP2012252008A (en) * 2011-06-06 2012-12-20 Robert Bosch Gmbh Method and device for calculating measurement value of chemical sensitivity field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716448A (en) * 1985-09-03 1987-12-29 Kelly Kevin A CHEMFET operation without a reference electrode
JP2012252008A (en) * 2011-06-06 2012-12-20 Robert Bosch Gmbh Method and device for calculating measurement value of chemical sensitivity field effect transistor

Also Published As

Publication number Publication date
JPS6044617B2 (en) 1985-10-04

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