JPS5752160A - Magnetoelectric transducer - Google Patents

Magnetoelectric transducer

Info

Publication number
JPS5752160A
JPS5752160A JP55128130A JP12813080A JPS5752160A JP S5752160 A JPS5752160 A JP S5752160A JP 55128130 A JP55128130 A JP 55128130A JP 12813080 A JP12813080 A JP 12813080A JP S5752160 A JPS5752160 A JP S5752160A
Authority
JP
Japan
Prior art keywords
hall
magnetic field
detecting
mos
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55128130A
Other languages
Japanese (ja)
Inventor
Masayuki Namiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP55128130A priority Critical patent/JPS5752160A/en
Publication of JPS5752160A publication Critical patent/JPS5752160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Abstract

PURPOSE:To obtain a C-MOS integrated circuit capable of accurately detecting the direction of a weak magnetic field by forming a magnetoelectric transducer and an accurate differential amplifier on the same substrate with a silicon substrate. CONSTITUTION:A resistor 2a is formed between the drain region 1a of an MOS Hall element and a power source 5, a resistor 2b is formed between the source region 1c and the ground, and a cnstant voltage is maintained between the drain and the source. When a vertical magnetic field B crosses the Hall element, a Hall voltage VH is outputted between the Hall probes 1d and 1e. The output of the Hall probe is connected to the input of a differential amplifier 3. The difference between the MOS Hall element and the other MOSFET is mere existence of the Hall probe for detecting the Hall voltage, and a circuit capable of detecting the direction of the magnetic field accurately and the magnetic flux density inexpensively on the same silicon substrate can be obtained.
JP55128130A 1980-09-16 1980-09-16 Magnetoelectric transducer Pending JPS5752160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128130A JPS5752160A (en) 1980-09-16 1980-09-16 Magnetoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128130A JPS5752160A (en) 1980-09-16 1980-09-16 Magnetoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5752160A true JPS5752160A (en) 1982-03-27

Family

ID=14977130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128130A Pending JPS5752160A (en) 1980-09-16 1980-09-16 Magnetoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5752160A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04339598A (en) * 1990-12-12 1992-11-26 Nippon Steel Corp Pressure molding device for granular or powder material
JPH05260579A (en) * 1991-06-19 1993-10-08 Daewoo Electron Co Ltd Woofer device for television receiver
US8035932B2 (en) 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51887A (en) * 1974-06-20 1976-01-07 Denki Onkyo Co Ltd Hoorusoshino kudohoshiki

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51887A (en) * 1974-06-20 1976-01-07 Denki Onkyo Co Ltd Hoorusoshino kudohoshiki

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04339598A (en) * 1990-12-12 1992-11-26 Nippon Steel Corp Pressure molding device for granular or powder material
JPH05260579A (en) * 1991-06-19 1993-10-08 Daewoo Electron Co Ltd Woofer device for television receiver
US8035932B2 (en) 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification

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