JPS6476036A - Thin film transistor panel - Google Patents
Thin film transistor panelInfo
- Publication number
- JPS6476036A JPS6476036A JP23336787A JP23336787A JPS6476036A JP S6476036 A JPS6476036 A JP S6476036A JP 23336787 A JP23336787 A JP 23336787A JP 23336787 A JP23336787 A JP 23336787A JP S6476036 A JPS6476036 A JP S6476036A
- Authority
- JP
- Japan
- Prior art keywords
- tft
- characteristic
- thin film
- film transistor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
Abstract
PURPOSE:To contrive to facilitate the measurement and the inspection of a characteristic of a TFT by constituting the titled panel so that the potential can be applied to sources of all thin film transistors (TFT). CONSTITUTION:On an insulating substrate 2, each TFT 6 is formed, and thereafter, an insulating layer 18 is formed so as to cover a drain electrode 12 containing at least a drain line 3, and a channel part 17 of each TFT 6, and on this insulating layer 18 and an exposed source electrode 13, a transparent electrode 5 is formed, and this panel becomes a structure which can measure and inspect a characteristic of each TFT 6, in a state that these source electrodes 13 is all connected in common temporarily. In such a way, the source potential can be applied in a lump to many formed TFTs 6, therefore, the characteristic of the transistor can be measured and inspected easily.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23336787A JP2592463B2 (en) | 1987-09-17 | 1987-09-17 | Thin film transistor panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23336787A JP2592463B2 (en) | 1987-09-17 | 1987-09-17 | Thin film transistor panel |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6476036A true JPS6476036A (en) | 1989-03-22 |
JP2592463B2 JP2592463B2 (en) | 1997-03-19 |
Family
ID=16954022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23336787A Expired - Lifetime JP2592463B2 (en) | 1987-09-17 | 1987-09-17 | Thin film transistor panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2592463B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039328A (en) * | 1989-06-07 | 1991-01-17 | Hitachi Ltd | Liquid crystal display device |
JPH05289104A (en) * | 1992-04-10 | 1993-11-05 | Matsushita Electric Ind Co Ltd | Liquid crystal display panel |
JPH07318973A (en) * | 1991-03-26 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device and production of electro-optic device |
US5956105A (en) * | 1991-06-14 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JP2008227498A (en) * | 2007-03-09 | 2008-09-25 | Korea Electronics Telecommun | Thin film transistor including n-type and p-type cis and method of manufacturing the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239346A (en) * | 1979-05-23 | 1980-12-16 | Hughes Aircraft Company | Compact liquid crystal display system |
JPS5862623A (en) * | 1981-10-09 | 1983-04-14 | Seiko Instr & Electronics Ltd | Liquid crystal display device |
JPS60112089A (en) * | 1983-11-22 | 1985-06-18 | 松下電器産業株式会社 | Image display unit and manufacture thereof |
JPS61235816A (en) * | 1985-04-11 | 1986-10-21 | Asahi Glass Co Ltd | Thin film active element |
JPS62223727A (en) * | 1986-03-25 | 1987-10-01 | Seiko Epson Corp | Liquid crystal panel |
-
1987
- 1987-09-17 JP JP23336787A patent/JP2592463B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239346A (en) * | 1979-05-23 | 1980-12-16 | Hughes Aircraft Company | Compact liquid crystal display system |
JPS5862623A (en) * | 1981-10-09 | 1983-04-14 | Seiko Instr & Electronics Ltd | Liquid crystal display device |
JPS60112089A (en) * | 1983-11-22 | 1985-06-18 | 松下電器産業株式会社 | Image display unit and manufacture thereof |
JPS61235816A (en) * | 1985-04-11 | 1986-10-21 | Asahi Glass Co Ltd | Thin film active element |
JPS62223727A (en) * | 1986-03-25 | 1987-10-01 | Seiko Epson Corp | Liquid crystal panel |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039328A (en) * | 1989-06-07 | 1991-01-17 | Hitachi Ltd | Liquid crystal display device |
JPH07318973A (en) * | 1991-03-26 | 1995-12-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device and production of electro-optic device |
US5933205A (en) * | 1991-03-26 | 1999-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for driving the same |
US5963278A (en) * | 1991-03-26 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for driving the same |
US5956105A (en) * | 1991-06-14 | 1999-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
JPH05289104A (en) * | 1992-04-10 | 1993-11-05 | Matsushita Electric Ind Co Ltd | Liquid crystal display panel |
JP2008227498A (en) * | 2007-03-09 | 2008-09-25 | Korea Electronics Telecommun | Thin film transistor including n-type and p-type cis and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2592463B2 (en) | 1997-03-19 |
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