JPS6424232A - Thin film transistor matrix - Google Patents
Thin film transistor matrixInfo
- Publication number
- JPS6424232A JPS6424232A JP62181922A JP18192287A JPS6424232A JP S6424232 A JPS6424232 A JP S6424232A JP 62181922 A JP62181922 A JP 62181922A JP 18192287 A JP18192287 A JP 18192287A JP S6424232 A JPS6424232 A JP S6424232A
- Authority
- JP
- Japan
- Prior art keywords
- bus line
- conductive film
- thin film
- drain bus
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To suppress the fluctuation in the voltage of picture element electrodes by capacity coupling so that a sharp image is obtd. by forming an opaque conductive film coated on a drain bus line, gate bus line and thin film transistor via a protective insulating film. CONSTITUTION:The opaque conductive film 7 is formed via the protective insulating film 6 on the drain bus line 2, gate bus line 3 and thin film transistor (TFT) 4 formed on an insulating substrate such as glass substrate 1. Namely, the potential conductive film 7 acts as a shielding film between the picture element electrode 5 and the drain bus line 2 if the conductive film 7 is connected to a ground end. The capacity component is then eliminated from the parasitic capacity and only the capacity component CD32 between the rear faces is eventually made to remain. The influence of the potential of the drain bus line 2 on the potential of the picture element electrode 5 is, thereby, extremely minimized. The undesirable fluctuation in the voltages is thereby suppressed and the good image quality is obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181922A JPS6424232A (en) | 1987-07-20 | 1987-07-20 | Thin film transistor matrix |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181922A JPS6424232A (en) | 1987-07-20 | 1987-07-20 | Thin film transistor matrix |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424232A true JPS6424232A (en) | 1989-01-26 |
Family
ID=16109251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62181922A Pending JPS6424232A (en) | 1987-07-20 | 1987-07-20 | Thin film transistor matrix |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424232A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03280020A (en) * | 1990-03-29 | 1991-12-11 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
EP0592063A2 (en) * | 1992-09-14 | 1994-04-13 | Kabushiki Kaisha Toshiba | Active matrix liquid crystal display device |
WO1997010530A1 (en) * | 1995-09-14 | 1997-03-20 | Hitachi, Ltd. | Active matrix liquid crystal display |
US5666180A (en) * | 1992-01-30 | 1997-09-09 | Canon Kabushiki Kaisha | Liquid crystal display with reduced parasitic capacitance between pixel elements and matrix wiring elements |
US6124904A (en) * | 1991-12-25 | 2000-09-26 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
JP2003503749A (en) * | 1999-06-25 | 2003-01-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Organic electroluminescent display |
WO2005101110A1 (en) * | 2004-04-16 | 2005-10-27 | Sony Corporation | Liquid display |
JP2006053555A (en) * | 2004-08-13 | 2006-02-23 | Samsung Electronics Co Ltd | Array substrate, main substrate having the same, and liquid crystal display device having the same |
JP2013530416A (en) * | 2010-06-02 | 2013-07-25 | アップル インコーポレイテッド | Gate shielding for liquid crystal displays |
WO2015045398A1 (en) * | 2013-09-27 | 2015-04-02 | 凸版印刷株式会社 | Electrochromic display panel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595229A (en) * | 1982-07-01 | 1984-01-12 | Asahi Glass Co Ltd | Image display device |
JPS61134785A (en) * | 1984-12-06 | 1986-06-21 | 松下電器産業株式会社 | Image display unit |
JPS6397919A (en) * | 1986-10-15 | 1988-04-28 | Seiko Epson Corp | Liquid crystal panel |
-
1987
- 1987-07-20 JP JP62181922A patent/JPS6424232A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS595229A (en) * | 1982-07-01 | 1984-01-12 | Asahi Glass Co Ltd | Image display device |
JPS61134785A (en) * | 1984-12-06 | 1986-06-21 | 松下電器産業株式会社 | Image display unit |
JPS6397919A (en) * | 1986-10-15 | 1988-04-28 | Seiko Epson Corp | Liquid crystal panel |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03280020A (en) * | 1990-03-29 | 1991-12-11 | Matsushita Electric Ind Co Ltd | Liquid crystal display device |
US6124904A (en) * | 1991-12-25 | 2000-09-26 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
US5666180A (en) * | 1992-01-30 | 1997-09-09 | Canon Kabushiki Kaisha | Liquid crystal display with reduced parasitic capacitance between pixel elements and matrix wiring elements |
EP0592063A2 (en) * | 1992-09-14 | 1994-04-13 | Kabushiki Kaisha Toshiba | Active matrix liquid crystal display device |
EP0592063A3 (en) * | 1992-09-14 | 1994-07-13 | Toshiba Kk | Active matrix liquid crystal display device |
WO1997010530A1 (en) * | 1995-09-14 | 1997-03-20 | Hitachi, Ltd. | Active matrix liquid crystal display |
JP2003503749A (en) * | 1999-06-25 | 2003-01-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Organic electroluminescent display |
WO2005101110A1 (en) * | 2004-04-16 | 2005-10-27 | Sony Corporation | Liquid display |
JP2006053555A (en) * | 2004-08-13 | 2006-02-23 | Samsung Electronics Co Ltd | Array substrate, main substrate having the same, and liquid crystal display device having the same |
JP2013530416A (en) * | 2010-06-02 | 2013-07-25 | アップル インコーポレイテッド | Gate shielding for liquid crystal displays |
WO2015045398A1 (en) * | 2013-09-27 | 2015-04-02 | 凸版印刷株式会社 | Electrochromic display panel |
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