JPS57104262A - Manufacture of semiconductor memory storage - Google Patents

Manufacture of semiconductor memory storage

Info

Publication number
JPS57104262A
JPS57104262A JP55180941A JP18094180A JPS57104262A JP S57104262 A JPS57104262 A JP S57104262A JP 55180941 A JP55180941 A JP 55180941A JP 18094180 A JP18094180 A JP 18094180A JP S57104262 A JPS57104262 A JP S57104262A
Authority
JP
Japan
Prior art keywords
conductor layer
insulating film
gate
erasing
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55180941A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331112B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55180941A priority Critical patent/JPS57104262A/ja
Priority to US06/320,936 priority patent/US4531203A/en
Publication of JPS57104262A publication Critical patent/JPS57104262A/ja
Priority to US06/721,431 priority patent/US4612212A/en
Publication of JPS6331112B2 publication Critical patent/JPS6331112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP55180941A 1980-12-20 1980-12-20 Manufacture of semiconductor memory storage Granted JPS57104262A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55180941A JPS57104262A (en) 1980-12-20 1980-12-20 Manufacture of semiconductor memory storage
US06/320,936 US4531203A (en) 1980-12-20 1981-11-13 Semiconductor memory device and method for manufacturing the same
US06/721,431 US4612212A (en) 1980-12-20 1985-04-09 Method for manufacturing E2 PROM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180941A JPS57104262A (en) 1980-12-20 1980-12-20 Manufacture of semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57104262A true JPS57104262A (en) 1982-06-29
JPS6331112B2 JPS6331112B2 (enrdf_load_stackoverflow) 1988-06-22

Family

ID=16091948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180941A Granted JPS57104262A (en) 1980-12-20 1980-12-20 Manufacture of semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57104262A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639980A (ja) * 1986-06-30 1988-01-16 Toshiba Corp 不揮発性半導体記憶装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639980A (ja) * 1986-06-30 1988-01-16 Toshiba Corp 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
JPS6331112B2 (enrdf_load_stackoverflow) 1988-06-22

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