JPS57100690A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- JPS57100690A JPS57100690A JP55175297A JP17529780A JPS57100690A JP S57100690 A JPS57100690 A JP S57100690A JP 55175297 A JP55175297 A JP 55175297A JP 17529780 A JP17529780 A JP 17529780A JP S57100690 A JPS57100690 A JP S57100690A
- Authority
- JP
- Japan
- Prior art keywords
- test
- memory
- reliability
- output
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175297A JPS57100690A (en) | 1980-12-12 | 1980-12-12 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175297A JPS57100690A (en) | 1980-12-12 | 1980-12-12 | Nonvolatile semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57100690A true JPS57100690A (en) | 1982-06-22 |
JPS6219000B2 JPS6219000B2 (ja) | 1987-04-25 |
Family
ID=15993634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55175297A Granted JPS57100690A (en) | 1980-12-12 | 1980-12-12 | Nonvolatile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57100690A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (ja) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | テスト回路付きepromメモリ装置 |
JPH01113999A (ja) * | 1987-10-28 | 1989-05-02 | Toshiba Corp | 不揮発性メモリのストレステスト回路 |
US4956819A (en) * | 1987-03-16 | 1990-09-11 | Siemens Aktiengesellschaft | Circuit configuration and a method of testing storage cells |
JP2008004159A (ja) * | 2006-06-21 | 2008-01-10 | Toshiba Corp | 半導体記憶装置及びそのテスト方法 |
-
1980
- 1980-12-12 JP JP55175297A patent/JPS57100690A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59107493A (ja) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | テスト回路付きepromメモリ装置 |
US4956819A (en) * | 1987-03-16 | 1990-09-11 | Siemens Aktiengesellschaft | Circuit configuration and a method of testing storage cells |
JPH01113999A (ja) * | 1987-10-28 | 1989-05-02 | Toshiba Corp | 不揮発性メモリのストレステスト回路 |
JP2008004159A (ja) * | 2006-06-21 | 2008-01-10 | Toshiba Corp | 半導体記憶装置及びそのテスト方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6219000B2 (ja) | 1987-04-25 |
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