JPS5698888A - Light emitting semiconductor laser - Google Patents

Light emitting semiconductor laser

Info

Publication number
JPS5698888A
JPS5698888A JP50880A JP50880A JPS5698888A JP S5698888 A JPS5698888 A JP S5698888A JP 50880 A JP50880 A JP 50880A JP 50880 A JP50880 A JP 50880A JP S5698888 A JPS5698888 A JP S5698888A
Authority
JP
Japan
Prior art keywords
film
substrate
layer
type inp
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50880A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156547B2 (ru
Inventor
Kenichi Iga
Yasuharu Suematsu
Katsumi Kishino
Haruhisa Soda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Original Assignee
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO KOGYO DAIGAKUCHO, Tokyo Institute of Technology NUC filed Critical TOKYO KOGYO DAIGAKUCHO
Priority to JP50880A priority Critical patent/JPS5698888A/ja
Publication of JPS5698888A publication Critical patent/JPS5698888A/ja
Publication of JPH0156547B2 publication Critical patent/JPH0156547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP50880A 1980-01-09 1980-01-09 Light emitting semiconductor laser Granted JPS5698888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50880A JPS5698888A (en) 1980-01-09 1980-01-09 Light emitting semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50880A JPS5698888A (en) 1980-01-09 1980-01-09 Light emitting semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5698888A true JPS5698888A (en) 1981-08-08
JPH0156547B2 JPH0156547B2 (ru) 1989-11-30

Family

ID=11475705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50880A Granted JPS5698888A (en) 1980-01-09 1980-01-09 Light emitting semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5698888A (ru)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (ja) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol 面発光形レ−ザ素子の製造方法
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS6140077A (ja) * 1984-07-31 1986-02-26 Res Dev Corp Of Japan ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法
JPS6376390A (ja) * 1986-09-18 1988-04-06 Nec Corp 発光半導体素子
US5375133A (en) * 1991-03-28 1994-12-20 Seiko Epson Corporation Surface emitting semiconductor laser and method of manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367391A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367391A (en) * 1976-11-29 1978-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5451491A (en) * 1977-09-30 1979-04-23 Hitachi Ltd Semiconductor laser
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (ja) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol 面発光形レ−ザ素子の製造方法
JPH0381316B2 (ru) * 1982-06-07 1991-12-27 Tokyo Kogyo Daigakucho
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS6140077A (ja) * 1984-07-31 1986-02-26 Res Dev Corp Of Japan ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法
JPH0325037B2 (ru) * 1984-07-31 1991-04-04 Shingijutsu Jigyodan
JPS6376390A (ja) * 1986-09-18 1988-04-06 Nec Corp 発光半導体素子
US5375133A (en) * 1991-03-28 1994-12-20 Seiko Epson Corporation Surface emitting semiconductor laser and method of manufacture

Also Published As

Publication number Publication date
JPH0156547B2 (ru) 1989-11-30

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