JPH0156547B2 - - Google Patents
Info
- Publication number
- JPH0156547B2 JPH0156547B2 JP55000508A JP50880A JPH0156547B2 JP H0156547 B2 JPH0156547 B2 JP H0156547B2 JP 55000508 A JP55000508 A JP 55000508A JP 50880 A JP50880 A JP 50880A JP H0156547 B2 JPH0156547 B2 JP H0156547B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- layer
- semiconductor
- substrate
- reflecting mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910001297 Zn alloy Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50880A JPS5698888A (en) | 1980-01-09 | 1980-01-09 | Light emitting semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50880A JPS5698888A (en) | 1980-01-09 | 1980-01-09 | Light emitting semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5698888A JPS5698888A (en) | 1981-08-08 |
| JPH0156547B2 true JPH0156547B2 (ru) | 1989-11-30 |
Family
ID=11475705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50880A Granted JPS5698888A (en) | 1980-01-09 | 1980-01-09 | Light emitting semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5698888A (ru) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58215087A (ja) * | 1982-06-07 | 1983-12-14 | Tokyo Inst Of Technol | 面発光形レ−ザ素子の製造方法 |
| JPS6032381A (ja) * | 1983-08-01 | 1985-02-19 | Matsushita Electric Ind Co Ltd | 面発光半導体レ−ザ装置 |
| JPS6140077A (ja) * | 1984-07-31 | 1986-02-26 | Res Dev Corp Of Japan | ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法 |
| JPS6376390A (ja) * | 1986-09-18 | 1988-04-06 | Nec Corp | 発光半導体素子 |
| KR100274283B1 (ko) * | 1991-03-28 | 2001-01-15 | 야스카와 히데아키 | 면 발광형 반도체 레이저 및 그 제조 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5367391A (en) * | 1976-11-29 | 1978-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPS5451491A (en) * | 1977-09-30 | 1979-04-23 | Hitachi Ltd | Semiconductor laser |
| JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
-
1980
- 1980-01-09 JP JP50880A patent/JPS5698888A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5367391A (en) * | 1976-11-29 | 1978-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| JPS5451491A (en) * | 1977-09-30 | 1979-04-23 | Hitachi Ltd | Semiconductor laser |
| JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5698888A (en) | 1981-08-08 |
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