JPS5691476A - Semiconductor - Google Patents

Semiconductor

Info

Publication number
JPS5691476A
JPS5691476A JP16870679A JP16870679A JPS5691476A JP S5691476 A JPS5691476 A JP S5691476A JP 16870679 A JP16870679 A JP 16870679A JP 16870679 A JP16870679 A JP 16870679A JP S5691476 A JPS5691476 A JP S5691476A
Authority
JP
Japan
Prior art keywords
film
silicon
oxide
gate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16870679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127917B2 (enExample
Inventor
Yasutaka Nakasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16870679A priority Critical patent/JPS5691476A/ja
Publication of JPS5691476A publication Critical patent/JPS5691476A/ja
Publication of JPS6127917B2 publication Critical patent/JPS6127917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP16870679A 1979-12-25 1979-12-25 Semiconductor Granted JPS5691476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16870679A JPS5691476A (en) 1979-12-25 1979-12-25 Semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16870679A JPS5691476A (en) 1979-12-25 1979-12-25 Semiconductor

Publications (2)

Publication Number Publication Date
JPS5691476A true JPS5691476A (en) 1981-07-24
JPS6127917B2 JPS6127917B2 (enExample) 1986-06-27

Family

ID=15872932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16870679A Granted JPS5691476A (en) 1979-12-25 1979-12-25 Semiconductor

Country Status (1)

Country Link
JP (1) JPS5691476A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01111199U (enExample) * 1988-01-19 1989-07-26

Also Published As

Publication number Publication date
JPS6127917B2 (enExample) 1986-06-27

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