JPS6127917B2 - - Google Patents
Info
- Publication number
- JPS6127917B2 JPS6127917B2 JP54168706A JP16870679A JPS6127917B2 JP S6127917 B2 JPS6127917 B2 JP S6127917B2 JP 54168706 A JP54168706 A JP 54168706A JP 16870679 A JP16870679 A JP 16870679A JP S6127917 B2 JPS6127917 B2 JP S6127917B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- present
- source
- gate
- drain diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W10/012—
-
- H10W10/13—
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870679A JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870679A JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5691476A JPS5691476A (en) | 1981-07-24 |
| JPS6127917B2 true JPS6127917B2 (enExample) | 1986-06-27 |
Family
ID=15872932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16870679A Granted JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5691476A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111199U (enExample) * | 1988-01-19 | 1989-07-26 |
-
1979
- 1979-12-25 JP JP16870679A patent/JPS5691476A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111199U (enExample) * | 1988-01-19 | 1989-07-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5691476A (en) | 1981-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5338954A (en) | Semiconductor memory device having an insulating film and a trap film joined in a channel region | |
| US7579244B2 (en) | Method of fabricating a semiconductor device | |
| JPH06112503A (ja) | 半導体記憶装置およびその製法 | |
| US5410161A (en) | Semiconductor device equipped with characteristic checking element | |
| EP0124115B1 (en) | Semiconducter rom device and method for manufacturing the same | |
| JPH05218358A (ja) | 半導体不揮発性記憶装置及びその製造方法 | |
| JPH0846050A (ja) | 半導体記憶装置およびその製造方法 | |
| JP2000077633A (ja) | 不揮発性記憶素子の製造方法 | |
| JP3107199B2 (ja) | 不揮発性半導体記憶装置の製造方法 | |
| JPS598065B2 (ja) | Mos集積回路の製造方法 | |
| JPS6127917B2 (enExample) | ||
| JPS61182267A (ja) | 半導体装置の製造方法 | |
| JPH03283468A (ja) | 不揮発性メモリ装置の製造方法 | |
| JP2573263B2 (ja) | 半導体装置の製造方法 | |
| JPH0485883A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JP3421136B2 (ja) | 不揮発性半導体メモリ装置の製造方法 | |
| JPS6240765A (ja) | 読み出し専用半導体記憶装置およびその製造方法 | |
| JPH0237778A (ja) | 半導体記憶装置の製造方法 | |
| JP3212689B2 (ja) | 半導体装置及びその製造方法 | |
| JPH0231466A (ja) | 不揮発性メモリ装置の製造方法 | |
| JPH01175765A (ja) | 半導体メモリ装置 | |
| JPH05343703A (ja) | 不揮発性メモリの製造方法 | |
| JPH10270577A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JPH06310734A (ja) | 半導体記憶装置の製造方法 | |
| JPS60121769A (ja) | Mis半導体装置の製法 |