JPS5690974A - Target device for sputtering - Google Patents
Target device for sputteringInfo
- Publication number
- JPS5690974A JPS5690974A JP16794279A JP16794279A JPS5690974A JP S5690974 A JPS5690974 A JP S5690974A JP 16794279 A JP16794279 A JP 16794279A JP 16794279 A JP16794279 A JP 16794279A JP S5690974 A JPS5690974 A JP S5690974A
- Authority
- JP
- Japan
- Prior art keywords
- back plate
- sputter
- anode
- cathode
- plural
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
PURPOSE:To enable a sputter film of arbitrary compositions to be easily formed by juxtaposing a plural of single sputter materials on the surface of a back plate. CONSTITUTION:Plural pure metals 3a, 3b constituting sputter films are uniformly dispersed on the surface 1a of a back plate 1, and these are disposed alternately or zigzag. The surface 1a of this back plate 1 is so disposed as to oppose to an anode to each other, and with the back plate 1 as cathode, voltage is applied between the anode and the cathode, whereby discharge is caused. If at this time an area ratio of the pure metals 3a, 3b are suitably changed, the sputter film by the alloy of a desired composition ratio is formed on the anode substrate to be sputtered.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16794279A JPS5690974A (en) | 1979-12-24 | 1979-12-24 | Target device for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16794279A JPS5690974A (en) | 1979-12-24 | 1979-12-24 | Target device for sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690974A true JPS5690974A (en) | 1981-07-23 |
Family
ID=15858902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16794279A Pending JPS5690974A (en) | 1979-12-24 | 1979-12-24 | Target device for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690974A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8910890B2 (en) | 2010-11-24 | 2014-12-16 | Honda Motor Co., Ltd. | Seeding device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144754B1 (en) * | 1971-04-15 | 1976-11-30 | ||
JPS53108884A (en) * | 1977-03-04 | 1978-09-22 | Nec Corp | Sputtering device |
-
1979
- 1979-12-24 JP JP16794279A patent/JPS5690974A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144754B1 (en) * | 1971-04-15 | 1976-11-30 | ||
JPS53108884A (en) * | 1977-03-04 | 1978-09-22 | Nec Corp | Sputtering device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8910890B2 (en) | 2010-11-24 | 2014-12-16 | Honda Motor Co., Ltd. | Seeding device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1369863A (en) | Piezoelectric materials and the manufacture thereof | |
US4505798A (en) | Magnetron sputtering apparatus | |
JPS5690974A (en) | Target device for sputtering | |
GB1212114A (en) | Negative-temperature-coefficient resistors | |
JPS57174459A (en) | Formation of thin film | |
US3399129A (en) | Sputer deposition of nickel-iron-manganese ferromagnetic films | |
GB1147318A (en) | Improvements in r.f. cathodic sputtering systems | |
JPS57158381A (en) | Magnetron sputtering device | |
JPS5665981A (en) | Sputtering device | |
JPS60131966A (en) | Sputtering device | |
JPS5558370A (en) | Electrode for sputtering target | |
JPS6425970A (en) | Sputtering device | |
JPS5647564A (en) | Operation of magnetron-type sputtering device | |
JPS53108884A (en) | Sputtering device | |
JPS5453895A (en) | Electrochromic display device | |
JPS57188676A (en) | Forming device for thin film by vacuum | |
JPS6445180A (en) | Manufacture of superconductive thin film using composite target | |
HOFFMEISTER et al. | Ion sputtering for manufacturing thin layers(copper on glass substrate with 70 to 100 mm diameter) | |
JPS5538947A (en) | Forming method of metallic compound coating | |
JPS6481112A (en) | Transparent conductive film | |
SU546021A1 (en) | Material for making thin film resistors | |
JPS6415365A (en) | Formation of sputtered thin film of aluminum or aluminum alloy | |
GB1270638A (en) | Process and apparatus for the production of alloys | |
Munz et al. | Cathode Sputter Coating Shaped Parts | |
JPS56155018A (en) | Solid compound and solid electrolyte |