JPS6425970A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6425970A
JPS6425970A JP18150787A JP18150787A JPS6425970A JP S6425970 A JPS6425970 A JP S6425970A JP 18150787 A JP18150787 A JP 18150787A JP 18150787 A JP18150787 A JP 18150787A JP S6425970 A JPS6425970 A JP S6425970A
Authority
JP
Japan
Prior art keywords
target
metal
thin film
cathodic
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18150787A
Other languages
Japanese (ja)
Inventor
Takehito Yoshida
Shinichi Ogawa
Seiji Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18150787A priority Critical patent/JPS6425970A/en
Publication of JPS6425970A publication Critical patent/JPS6425970A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To form a thin film of optional composition with good controllability by arranging the cathodic targets consisting of the silicide of a metal, the metal, and silicon almost in the form of an equilateral triangle, and appropriately sputtering the targets. CONSTITUTION:The cathodic target 2 made of the silicide of a metal, the cathodic target 4 made of the metal, and the cathodic target 3 made of silicon are arranged on a cathode back plate 5 almost in the form of an equilateral triangle. An object 9 is fixed to an anode 1, and arranged above the center of the targets 2-4. The whole structure is placed in a vacuum vessel 10, and sputtering is carried out by the conventional method. At this time, a relatively high DC power is impressed on the target 2 to deposit a thin metal silicide film, and the thin film is formed by the particles 14 sputtered from the target 2. When a thin film having a high content of silicon is formed, an RF power is additionally impressed on the target 3, and a DC power is additionally impressed on the target 4 to obtain a thin film having a high content of the metal.
JP18150787A 1987-07-21 1987-07-21 Sputtering device Pending JPS6425970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18150787A JPS6425970A (en) 1987-07-21 1987-07-21 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18150787A JPS6425970A (en) 1987-07-21 1987-07-21 Sputtering device

Publications (1)

Publication Number Publication Date
JPS6425970A true JPS6425970A (en) 1989-01-27

Family

ID=16101971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18150787A Pending JPS6425970A (en) 1987-07-21 1987-07-21 Sputtering device

Country Status (1)

Country Link
JP (1) JPS6425970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068826A (en) * 2006-09-15 2008-03-27 Mazda Motor Corp Vehicle body structure for automobile

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068826A (en) * 2006-09-15 2008-03-27 Mazda Motor Corp Vehicle body structure for automobile

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