JPS5688370A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5688370A JPS5688370A JP16613179A JP16613179A JPS5688370A JP S5688370 A JPS5688370 A JP S5688370A JP 16613179 A JP16613179 A JP 16613179A JP 16613179 A JP16613179 A JP 16613179A JP S5688370 A JPS5688370 A JP S5688370A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- region
- projected
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000000717 retained effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Abstract
PURPOSE:To obtain an SIT having an infinitesimal shape, low parasitic capacity and high operating speed by using an epitaxial layer accumulated on a semiconductor layer for a projected drain region when forming a gate region and a projected drain region surrounded thereby on the semiconductor layer. CONSTITUTION:An N<-> type layer 13 is epitaxially grown on a P type Si substrate 11 having an N type buried region 12, an Si3N4 film 21 is covered on the entire surface, is retained only on the gate and injector regions formed later, and the other is modified to SiO2 film 22. Then, a window 3' is opened at the retained film 21, projected trapezoidal N<-> type layer 3 projected only to the portion of the layer 13 exposed is epitaxially grown, the films 21, 21' are moved, and a new SiO2 film 22 is covered on the entire surface. Thereafter, both sides of the layer 3 and the film 22 on the injector region are removed, P<+> type gate region and the injector region 4 are diffused in the layer 13, and N<+> type drain regions 6 are diffused in the layer 3. Subsequently, V-shaped groove 10 is opened on the layer 13, and an N<+> type source region 9 is formed on the side wall thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16613179A JPS5688370A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16613179A JPS5688370A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5688370A true JPS5688370A (en) | 1981-07-17 |
Family
ID=15825601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16613179A Pending JPS5688370A (en) | 1979-12-20 | 1979-12-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688370A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286879A (en) * | 1985-10-14 | 1987-04-21 | Res Dev Corp Of Japan | Manufacture of semiconductor photoelectric converter |
-
1979
- 1979-12-20 JP JP16613179A patent/JPS5688370A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286879A (en) * | 1985-10-14 | 1987-04-21 | Res Dev Corp Of Japan | Manufacture of semiconductor photoelectric converter |
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