JPS5685878A - Manufacture of photoelectric conversion element - Google Patents
Manufacture of photoelectric conversion elementInfo
- Publication number
- JPS5685878A JPS5685878A JP16372379A JP16372379A JPS5685878A JP S5685878 A JPS5685878 A JP S5685878A JP 16372379 A JP16372379 A JP 16372379A JP 16372379 A JP16372379 A JP 16372379A JP S5685878 A JPS5685878 A JP S5685878A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- vacuum
- amorphous
- torr
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 2
- 229910001120 nichrome Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001887 tin oxide Inorganic materials 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16372379A JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16372379A JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5685878A true JPS5685878A (en) | 1981-07-13 |
JPS634356B2 JPS634356B2 (US08063081-20111122-C00242.png) | 1988-01-28 |
Family
ID=15779431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16372379A Granted JPS5685878A (en) | 1979-12-17 | 1979-12-17 | Manufacture of photoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5685878A (US08063081-20111122-C00242.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59151476A (ja) * | 1983-02-18 | 1984-08-29 | Fuji Xerox Co Ltd | 光電変換素子 |
JPS59229881A (ja) * | 1983-06-08 | 1984-12-24 | Fuji Xerox Co Ltd | 光電変換素子の製造方法 |
CN100399584C (zh) * | 2005-12-01 | 2008-07-02 | 上海交通大学 | 一种二氧化锡/硅异质结太阳电池 |
-
1979
- 1979-12-17 JP JP16372379A patent/JPS5685878A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59151476A (ja) * | 1983-02-18 | 1984-08-29 | Fuji Xerox Co Ltd | 光電変換素子 |
JPS59229881A (ja) * | 1983-06-08 | 1984-12-24 | Fuji Xerox Co Ltd | 光電変換素子の製造方法 |
CN100399584C (zh) * | 2005-12-01 | 2008-07-02 | 上海交通大学 | 一种二氧化锡/硅异质结太阳电池 |
Also Published As
Publication number | Publication date |
---|---|
JPS634356B2 (US08063081-20111122-C00242.png) | 1988-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5248621A (en) | Method for producing solar cell devices of crystalline material | |
US4814842A (en) | Thin film transistor utilizing hydrogenated polycrystalline silicon | |
US4237151A (en) | Thermal decomposition of silane to form hydrogenated amorphous Si film | |
JPS5562778A (en) | Preparation of photoconductor film | |
US4657775A (en) | Method for production of silicon thin film piezoresistive devices | |
US5211761A (en) | Photovoltaic device and manufacturing method thereof | |
JPS5685878A (en) | Manufacture of photoelectric conversion element | |
JPS55157276A (en) | Amorphous thin film solar battery | |
JP2592809B2 (ja) | 光起電力素子の製造方法 | |
JPS57197848A (en) | Semiconductor device and manufacture thereof | |
JPS56142680A (en) | Photoconductive semiconductor device | |
JPS5614408A (en) | Manufacture of solid electrolyte | |
JPS6361768B2 (US08063081-20111122-C00242.png) | ||
JPS60178618A (ja) | 薄膜形成法 | |
JPS6415969A (en) | Solid-state image sensing device and manufacture thereof | |
JPS5614412A (en) | Manufacture of amorphous silicon film | |
JPS645002A (en) | Temperature detector | |
JPH0373149B2 (US08063081-20111122-C00242.png) | ||
JPH025017B2 (US08063081-20111122-C00242.png) | ||
JPS60157273A (ja) | 薄膜ホトトランジスタの製造方法 | |
JPS6461959A (en) | Manufacture of transparent conductive film for amorphous silicon solar cell | |
JPH04229664A (ja) | 光起電力装置及びその製造方法 | |
JPS6450574A (en) | Manufacture of hetero-junction element | |
JPS61256625A (ja) | 薄膜半導体素子の製造方法 | |
JPH0456474B2 (US08063081-20111122-C00242.png) |