JPS5678497A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPS5678497A JPS5678497A JP15342279A JP15342279A JPS5678497A JP S5678497 A JPS5678497 A JP S5678497A JP 15342279 A JP15342279 A JP 15342279A JP 15342279 A JP15342279 A JP 15342279A JP S5678497 A JPS5678497 A JP S5678497A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- reaction gas
- growth
- surrounded
- inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15342279A JPS5678497A (en) | 1979-11-27 | 1979-11-27 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15342279A JPS5678497A (en) | 1979-11-27 | 1979-11-27 | Vapor growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678497A true JPS5678497A (en) | 1981-06-27 |
| JPS6220160B2 JPS6220160B2 (enrdf_load_stackoverflow) | 1987-05-06 |
Family
ID=15562151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15342279A Granted JPS5678497A (en) | 1979-11-27 | 1979-11-27 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678497A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016898A (ja) * | 1983-07-08 | 1985-01-28 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JPS615515A (ja) * | 1984-06-07 | 1986-01-11 | Fujitsu Ltd | 化学気相成長装置 |
| JPS61158947U (enrdf_load_stackoverflow) * | 1985-03-26 | 1986-10-02 | ||
| JPS62152123A (ja) * | 1985-12-26 | 1987-07-07 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
| JPH02142525U (enrdf_load_stackoverflow) * | 1990-05-10 | 1990-12-04 | ||
| WO1993006619A1 (en) * | 1991-09-27 | 1993-04-01 | Komatsu Electronic Metals Co., Ltd. | Apparatus for introducing gas, and apparatus and method for epitaxial growth |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5436621U (enrdf_load_stackoverflow) * | 1977-08-17 | 1979-03-10 |
-
1979
- 1979-11-27 JP JP15342279A patent/JPS5678497A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5436621U (enrdf_load_stackoverflow) * | 1977-08-17 | 1979-03-10 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016898A (ja) * | 1983-07-08 | 1985-01-28 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JPS615515A (ja) * | 1984-06-07 | 1986-01-11 | Fujitsu Ltd | 化学気相成長装置 |
| JPS61158947U (enrdf_load_stackoverflow) * | 1985-03-26 | 1986-10-02 | ||
| JPS62152123A (ja) * | 1985-12-26 | 1987-07-07 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
| JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
| JPH02142525U (enrdf_load_stackoverflow) * | 1990-05-10 | 1990-12-04 | ||
| WO1993006619A1 (en) * | 1991-09-27 | 1993-04-01 | Komatsu Electronic Metals Co., Ltd. | Apparatus for introducing gas, and apparatus and method for epitaxial growth |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6220160B2 (enrdf_load_stackoverflow) | 1987-05-06 |
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