JPS5676576A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5676576A JPS5676576A JP15345179A JP15345179A JPS5676576A JP S5676576 A JPS5676576 A JP S5676576A JP 15345179 A JP15345179 A JP 15345179A JP 15345179 A JP15345179 A JP 15345179A JP S5676576 A JPS5676576 A JP S5676576A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- type
- regions
- semiconductor region
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 13
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15345179A JPS5676576A (en) | 1979-11-26 | 1979-11-26 | Semiconductor device and manufacture thereof |
| FR8008805A FR2454703B1 (fr) | 1979-04-21 | 1980-04-18 | Transistor a effet de champ et procede de fabrication |
| CA000354607A CA1139893A (en) | 1979-11-26 | 1980-06-23 | Field effect transistor devices and methods of manufacturing the same |
| DE19803024826 DE3024826C2 (de) | 1979-11-26 | 1980-07-01 | Feldeffekt-Transistor und Verfahren zu seiner Herstellung |
| GB8021812A GB2065967B (en) | 1979-11-26 | 1980-07-03 | Field effect transitor |
| NL8003944A NL189534C (nl) | 1979-11-26 | 1980-07-09 | Veldeffecttransistor. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15345179A JPS5676576A (en) | 1979-11-26 | 1979-11-26 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5676576A true JPS5676576A (en) | 1981-06-24 |
Family
ID=15562833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15345179A Pending JPS5676576A (en) | 1979-04-21 | 1979-11-26 | Semiconductor device and manufacture thereof |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5676576A (de) |
| CA (1) | CA1139893A (de) |
| DE (1) | DE3024826C2 (de) |
| GB (1) | GB2065967B (de) |
| NL (1) | NL189534C (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2501913A1 (fr) * | 1981-03-10 | 1982-09-17 | Thomson Csf | Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor |
| KR920022546A (ko) * | 1991-05-31 | 1992-12-19 | 김광호 | 모오스 트랜지스터의 구조 및 그 제조방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2728532A1 (de) * | 1977-06-24 | 1979-01-11 | Siemens Ag | Sperrschicht-feldeffekttransistor |
| NL188776C (nl) * | 1979-04-21 | 1992-09-16 | Nippon Telegraph & Telephone | Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan. |
-
1979
- 1979-11-26 JP JP15345179A patent/JPS5676576A/ja active Pending
-
1980
- 1980-06-23 CA CA000354607A patent/CA1139893A/en not_active Expired
- 1980-07-01 DE DE19803024826 patent/DE3024826C2/de not_active Expired
- 1980-07-03 GB GB8021812A patent/GB2065967B/en not_active Expired
- 1980-07-09 NL NL8003944A patent/NL189534C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2065967B (en) | 1983-07-13 |
| CA1139893A (en) | 1983-01-18 |
| DE3024826C2 (de) | 1985-05-09 |
| NL189534C (nl) | 1993-05-03 |
| NL8003944A (nl) | 1981-06-16 |
| NL189534B (nl) | 1992-12-01 |
| GB2065967A (en) | 1981-07-01 |
| DE3024826A1 (de) | 1981-05-27 |
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