NL189534C - Veldeffecttransistor. - Google Patents

Veldeffecttransistor.

Info

Publication number
NL189534C
NL189534C NL8003944A NL8003944A NL189534C NL 189534 C NL189534 C NL 189534C NL 8003944 A NL8003944 A NL 8003944A NL 8003944 A NL8003944 A NL 8003944A NL 189534 C NL189534 C NL 189534C
Authority
NL
Netherlands
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
NL8003944A
Other languages
English (en)
Dutch (nl)
Other versions
NL8003944A (nl
NL189534B (nl
Inventor
Yasunobu Ishii
Kazuyoshi Asai
Katsuhiko Kurumada
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8003944A publication Critical patent/NL8003944A/nl
Publication of NL189534B publication Critical patent/NL189534B/xx
Application granted granted Critical
Publication of NL189534C publication Critical patent/NL189534C/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
NL8003944A 1979-11-26 1980-07-09 Veldeffecttransistor. NL189534C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15345179A JPS5676576A (en) 1979-11-26 1979-11-26 Semiconductor device and manufacture thereof
JP15345179 1979-11-26

Publications (3)

Publication Number Publication Date
NL8003944A NL8003944A (nl) 1981-06-16
NL189534B NL189534B (nl) 1992-12-01
NL189534C true NL189534C (nl) 1993-05-03

Family

ID=15562833

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8003944A NL189534C (nl) 1979-11-26 1980-07-09 Veldeffecttransistor.

Country Status (5)

Country Link
JP (1) JPS5676576A (de)
CA (1) CA1139893A (de)
DE (1) DE3024826C2 (de)
GB (1) GB2065967B (de)
NL (1) NL189534C (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
KR920022546A (ko) * 1991-05-31 1992-12-19 김광호 모오스 트랜지스터의 구조 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2728532A1 (de) * 1977-06-24 1979-01-11 Siemens Ag Sperrschicht-feldeffekttransistor
NL188776C (nl) * 1979-04-21 1992-09-16 Nippon Telegraph & Telephone Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan.

Also Published As

Publication number Publication date
GB2065967B (en) 1983-07-13
CA1139893A (en) 1983-01-18
DE3024826C2 (de) 1985-05-09
JPS5676576A (en) 1981-06-24
NL8003944A (nl) 1981-06-16
NL189534B (nl) 1992-12-01
GB2065967A (en) 1981-07-01
DE3024826A1 (de) 1981-05-27

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
CNR Transfer of rights (patent application after its laying openfor public ins pection)

Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

BC A request for examination has been filed
V4 Lapsed because of reaching the maxim lifetime of a patent

Free format text: 20000709