JPS5676042A - Field effect transistor for ion sensor - Google Patents

Field effect transistor for ion sensor

Info

Publication number
JPS5676042A
JPS5676042A JP15387579A JP15387579A JPS5676042A JP S5676042 A JPS5676042 A JP S5676042A JP 15387579 A JP15387579 A JP 15387579A JP 15387579 A JP15387579 A JP 15387579A JP S5676042 A JPS5676042 A JP S5676042A
Authority
JP
Japan
Prior art keywords
film
substrate
sio
polysilicon layer
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15387579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6134617B2 (enExample
Inventor
Yoshitaka Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP15387579A priority Critical patent/JPS5676042A/ja
Publication of JPS5676042A publication Critical patent/JPS5676042A/ja
Publication of JPS6134617B2 publication Critical patent/JPS6134617B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
JP15387579A 1979-11-28 1979-11-28 Field effect transistor for ion sensor Granted JPS5676042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15387579A JPS5676042A (en) 1979-11-28 1979-11-28 Field effect transistor for ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15387579A JPS5676042A (en) 1979-11-28 1979-11-28 Field effect transistor for ion sensor

Publications (2)

Publication Number Publication Date
JPS5676042A true JPS5676042A (en) 1981-06-23
JPS6134617B2 JPS6134617B2 (enExample) 1986-08-08

Family

ID=15572014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15387579A Granted JPS5676042A (en) 1979-11-28 1979-11-28 Field effect transistor for ion sensor

Country Status (1)

Country Link
JP (1) JPS5676042A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62102160U (enExample) * 1985-12-18 1987-06-29
CN102290349A (zh) * 2010-06-21 2011-12-21 无锡华润上华半导体有限公司 半导体结构及其形成方法
JP2019516992A (ja) * 2016-05-18 2019-06-20 ディーエヌエーイー グループ ホールディングス リミテッド 集積回路のためのパッケージングにおける又は関連する改善

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62102160U (enExample) * 1985-12-18 1987-06-29
CN102290349A (zh) * 2010-06-21 2011-12-21 无锡华润上华半导体有限公司 半导体结构及其形成方法
JP2019516992A (ja) * 2016-05-18 2019-06-20 ディーエヌエーイー グループ ホールディングス リミテッド 集積回路のためのパッケージングにおける又は関連する改善

Also Published As

Publication number Publication date
JPS6134617B2 (enExample) 1986-08-08

Similar Documents

Publication Publication Date Title
JPS5621372A (en) Manufacture of semiconductor device
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5676042A (en) Field effect transistor for ion sensor
JPS5559759A (en) Semiconductor device
JPS5633881A (en) Manufacture of semiconductor device
JPS5585073A (en) Manufacture of insulation gate type electric field effect transistor
JPS57191539A (en) Semiconductor ion sensor
JPS54130883A (en) Production of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS6489457A (en) Manufacture of semiconductor device
JPS5694671A (en) Manufacture of mis field-effect semiconductor device
JPS5676043A (en) Compound field effect transistor for ion sensor
JPS56130970A (en) Manufacture of semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS54129982A (en) Semiconductor device
JPS57201080A (en) Semiconductor device
JPS53137678A (en) Manufacture for mos type semiconductor device
JPS5670669A (en) Longitudinal semiconductor device
JPS5753958A (ja) Handotaisochi
JPS5376770A (en) Production of insulated gate field effect transistor
JPS5423483A (en) Manufacture for semiconductor device
JPS5472668A (en) Manufacture for semiconductor device
JPS5651871A (en) Manufacture of complementary type mos semiconductor device
JPS54154979A (en) Manufacture of insulated gate type semiconductor device