JPS5674964A - Transistor - Google Patents
TransistorInfo
- Publication number
- JPS5674964A JPS5674964A JP15230779A JP15230779A JPS5674964A JP S5674964 A JPS5674964 A JP S5674964A JP 15230779 A JP15230779 A JP 15230779A JP 15230779 A JP15230779 A JP 15230779A JP S5674964 A JPS5674964 A JP S5674964A
- Authority
- JP
- Japan
- Prior art keywords
- area
- type
- emitter
- base
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To increase a diffusion potential difference in the neighborhood of an emitter base bonded surface so that the surfacial current density is reduced by forming a thin single conductive-type high impurity concentration area encircling an emitter area on the surfacial surrounding of an opposite conductive-type emitter area provided inside a single conductive-type base area. CONSTITUTION:Inside a N type silicon substrate 1 which serves as a collector area, a P type base area 3 is diffused and formed, causing collector base bonding 5. At the same time, a N type emitter area 4 is provided inside the area 3 to constitute an emitter base bonding 6. In this way, a planer-type transistor is provided. Further, it is located near the surface of the area 4, so that the area 4 is encircled. After this process, a thin P type high impurity concentration area 9 across the areas 4, 3 is added. Next, SiO2 film 2 is attached on the entire surface of the transistor with an opening provided. Electrodes 7, 8 are installed on the areas 3, 4 respectively. In this way, the effective impurity concentration differential between the areas 3, 4 is minimized, so that the current amplification factor and the noise characteristic may be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230779A JPS5674964A (en) | 1979-11-24 | 1979-11-24 | Transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15230779A JPS5674964A (en) | 1979-11-24 | 1979-11-24 | Transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5674964A true JPS5674964A (en) | 1981-06-20 |
Family
ID=15537657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15230779A Pending JPS5674964A (en) | 1979-11-24 | 1979-11-24 | Transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674964A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949397A (en) * | 1972-05-26 | 1974-05-13 |
-
1979
- 1979-11-24 JP JP15230779A patent/JPS5674964A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949397A (en) * | 1972-05-26 | 1974-05-13 |
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