JPS55162267A - Transistor structure - Google Patents

Transistor structure

Info

Publication number
JPS55162267A
JPS55162267A JP7043879A JP7043879A JPS55162267A JP S55162267 A JPS55162267 A JP S55162267A JP 7043879 A JP7043879 A JP 7043879A JP 7043879 A JP7043879 A JP 7043879A JP S55162267 A JPS55162267 A JP S55162267A
Authority
JP
Japan
Prior art keywords
layer
current
emitter
center
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7043879A
Other languages
Japanese (ja)
Other versions
JPS6239546B2 (en
Inventor
Tadahiko Tanaka
Toshio Wakabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP7043879A priority Critical patent/JPS55162267A/en
Publication of JPS55162267A publication Critical patent/JPS55162267A/en
Publication of JPS6239546B2 publication Critical patent/JPS6239546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent current consentration and improve destruction strength by forming an emitter layer into the shape that it is depressed toward its center. CONSTITUTION:p Base layer 10 is formed on n-type Si substrate 9, and inside this is formed p<+> connection layer 11 of a net-form. N emitter layer 12 is formed in p base layer 10 surrounded by layer 11. The shape of emitter layer 12 is such that each side of a square has depression 13 toward the center, and emitter connection layer 14 is provided in the center. By means of comb-shaped electrode 15, each emitter layer 12 is connected to others. Base connection layer 11 is connected to electrode 17. When the depth of depression 13 of the emitter layer is selected, the current between AB and the current between AC can be made equal. When a large current is made to flow, the current does not concentrate, so that no destruction occurs. Further, since the length of the edge of the emitter is increased, the current amplification factor hFE at the time of a large current or the saturation voltage is greatly improved.
JP7043879A 1979-06-04 1979-06-04 Transistor structure Granted JPS55162267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7043879A JPS55162267A (en) 1979-06-04 1979-06-04 Transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7043879A JPS55162267A (en) 1979-06-04 1979-06-04 Transistor structure

Publications (2)

Publication Number Publication Date
JPS55162267A true JPS55162267A (en) 1980-12-17
JPS6239546B2 JPS6239546B2 (en) 1987-08-24

Family

ID=13431481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7043879A Granted JPS55162267A (en) 1979-06-04 1979-06-04 Transistor structure

Country Status (1)

Country Link
JP (1) JPS55162267A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680608A (en) * 1984-02-07 1987-07-14 Nippondenso Co., Ltd. Semiconductor device
JPS62124861U (en) * 1986-01-30 1987-08-08

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136595A (en) * 1974-09-20 1976-03-27 Yaskawa Denki Seisakusho Kk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136595A (en) * 1974-09-20 1976-03-27 Yaskawa Denki Seisakusho Kk

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680608A (en) * 1984-02-07 1987-07-14 Nippondenso Co., Ltd. Semiconductor device
JPS62124861U (en) * 1986-01-30 1987-08-08
JPH0546268Y2 (en) * 1986-01-30 1993-12-03

Also Published As

Publication number Publication date
JPS6239546B2 (en) 1987-08-24

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