JPS567451A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS567451A
JPS567451A JP8137079A JP8137079A JPS567451A JP S567451 A JPS567451 A JP S567451A JP 8137079 A JP8137079 A JP 8137079A JP 8137079 A JP8137079 A JP 8137079A JP S567451 A JPS567451 A JP S567451A
Authority
JP
Japan
Prior art keywords
layer
wiring
dielectric strength
easy
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8137079A
Other languages
Japanese (ja)
Inventor
Takanori Nishimura
Norio Anzai
Koichiro Satonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8137079A priority Critical patent/JPS567451A/en
Publication of JPS567451A publication Critical patent/JPS567451A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the deterioration of dielectric strength by a method wherein the thickness of a inter layer insulating film of organic matter is changed on a region easy to be subject to effect by an electric field of an upper layer wiring with high potential, or a high concentration diffusion layer is formed in the region, or a shielding portion by wiring with low potential is made up. CONSTITUTION:A PSG or SiO2 film 10 is held between a polyimide resin film 8 having a high heat resisting property between Al wiring 6, 7 and 9 and an upper portion of a p-type layer easy to be subject to the effect of an electric field of the wiring 9. Or a p<+>-layer 12 is formed to one portion of the surface of the p-type layer easy to be n-inverted by the polarization of the insulating film 8 under the wiring 9. Or the electrodes 6, 7 are extended onto the p-layer in order to prevent n-inversion and the p-layer is shielded 18. Such constitution prevents the deterioration of the dielectric strength due to MOS parasitic effect in an IC with multilayer wiring structure, and can further keep the dielectric strength between a base and a collector in conventional two layer wiring structure at the dielectric strength in case of wiring.
JP8137079A 1979-06-29 1979-06-29 Semiconductor device Pending JPS567451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8137079A JPS567451A (en) 1979-06-29 1979-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8137079A JPS567451A (en) 1979-06-29 1979-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS567451A true JPS567451A (en) 1981-01-26

Family

ID=13744417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8137079A Pending JPS567451A (en) 1979-06-29 1979-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS567451A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504675B1 (en) * 1969-08-07 1975-02-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504675B1 (en) * 1969-08-07 1975-02-22

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