JPS5673438A - Dryetching monitoring method for nitriding silicon - Google Patents

Dryetching monitoring method for nitriding silicon

Info

Publication number
JPS5673438A
JPS5673438A JP15008179A JP15008179A JPS5673438A JP S5673438 A JPS5673438 A JP S5673438A JP 15008179 A JP15008179 A JP 15008179A JP 15008179 A JP15008179 A JP 15008179A JP S5673438 A JPS5673438 A JP S5673438A
Authority
JP
Japan
Prior art keywords
sih
etching
spectrum
dryetching
monitoring method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15008179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5719569B2 (enrdf_load_stackoverflow
Inventor
Hideo Komatsu
Tatsumi Mizutani
Shinya Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15008179A priority Critical patent/JPS5673438A/ja
Priority to DE19803043517 priority patent/DE3043517A1/de
Publication of JPS5673438A publication Critical patent/JPS5673438A/ja
Publication of JPS5719569B2 publication Critical patent/JPS5719569B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/67Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using electric arcs or discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP15008179A 1979-11-21 1979-11-21 Dryetching monitoring method for nitriding silicon Granted JPS5673438A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15008179A JPS5673438A (en) 1979-11-21 1979-11-21 Dryetching monitoring method for nitriding silicon
DE19803043517 DE3043517A1 (de) 1979-11-21 1980-11-18 Verfahren zur ueberwachung eines siliciumnitrid-trockenaetzverfahrens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15008179A JPS5673438A (en) 1979-11-21 1979-11-21 Dryetching monitoring method for nitriding silicon

Publications (2)

Publication Number Publication Date
JPS5673438A true JPS5673438A (en) 1981-06-18
JPS5719569B2 JPS5719569B2 (enrdf_load_stackoverflow) 1982-04-23

Family

ID=15489091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15008179A Granted JPS5673438A (en) 1979-11-21 1979-11-21 Dryetching monitoring method for nitriding silicon

Country Status (2)

Country Link
JP (1) JPS5673438A (enrdf_load_stackoverflow)
DE (1) DE3043517A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826013A (ja) * 1981-08-03 1983-02-16 Oki Electric Ind Co Ltd 窒化シリコン膜のエツチング方法
CN105938103A (zh) * 2015-03-04 2016-09-14 馗鼎奈米科技股份有限公司 等离子放电辉光的光学监控方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
CN114660909B (zh) * 2022-03-25 2025-08-26 无锡邑文微电子科技股份有限公司 光刻胶去除方法和去胶机

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826013A (ja) * 1981-08-03 1983-02-16 Oki Electric Ind Co Ltd 窒化シリコン膜のエツチング方法
CN105938103A (zh) * 2015-03-04 2016-09-14 馗鼎奈米科技股份有限公司 等离子放电辉光的光学监控方法

Also Published As

Publication number Publication date
DE3043517A1 (de) 1981-06-11
DE3043517C2 (enrdf_load_stackoverflow) 1987-06-25
JPS5719569B2 (enrdf_load_stackoverflow) 1982-04-23

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