JPS5670636A - Gas plasma etching of transparent conductive film - Google Patents
Gas plasma etching of transparent conductive filmInfo
- Publication number
- JPS5670636A JPS5670636A JP14652079A JP14652079A JPS5670636A JP S5670636 A JPS5670636 A JP S5670636A JP 14652079 A JP14652079 A JP 14652079A JP 14652079 A JP14652079 A JP 14652079A JP S5670636 A JPS5670636 A JP S5670636A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- gas plasma
- base
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P50/00—
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14652079A JPS5670636A (en) | 1979-11-14 | 1979-11-14 | Gas plasma etching of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14652079A JPS5670636A (en) | 1979-11-14 | 1979-11-14 | Gas plasma etching of transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5670636A true JPS5670636A (en) | 1981-06-12 |
| JPS6234138B2 JPS6234138B2 (enExample) | 1987-07-24 |
Family
ID=15409501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14652079A Granted JPS5670636A (en) | 1979-11-14 | 1979-11-14 | Gas plasma etching of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5670636A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249209A (ja) * | 1984-05-24 | 1985-12-09 | 科学技術庁無機材質研究所長 | 酸化錫膜の電子回路パタ−ンの形成方法 |
| US5607602A (en) * | 1995-06-07 | 1997-03-04 | Applied Komatsu Technology, Inc. | High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas |
-
1979
- 1979-11-14 JP JP14652079A patent/JPS5670636A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60249209A (ja) * | 1984-05-24 | 1985-12-09 | 科学技術庁無機材質研究所長 | 酸化錫膜の電子回路パタ−ンの形成方法 |
| US5607602A (en) * | 1995-06-07 | 1997-03-04 | Applied Komatsu Technology, Inc. | High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6234138B2 (enExample) | 1987-07-24 |
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