JPS5670636A - Gas plasma etching of transparent conductive film - Google Patents

Gas plasma etching of transparent conductive film

Info

Publication number
JPS5670636A
JPS5670636A JP14652079A JP14652079A JPS5670636A JP S5670636 A JPS5670636 A JP S5670636A JP 14652079 A JP14652079 A JP 14652079A JP 14652079 A JP14652079 A JP 14652079A JP S5670636 A JPS5670636 A JP S5670636A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
gas plasma
base
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14652079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234138B2 (enExample
Inventor
Kensaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14652079A priority Critical patent/JPS5670636A/ja
Publication of JPS5670636A publication Critical patent/JPS5670636A/ja
Publication of JPS6234138B2 publication Critical patent/JPS6234138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • ing And Chemical Polishing (AREA)
JP14652079A 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film Granted JPS5670636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14652079A JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14652079A JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Publications (2)

Publication Number Publication Date
JPS5670636A true JPS5670636A (en) 1981-06-12
JPS6234138B2 JPS6234138B2 (enExample) 1987-07-24

Family

ID=15409501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14652079A Granted JPS5670636A (en) 1979-11-14 1979-11-14 Gas plasma etching of transparent conductive film

Country Status (1)

Country Link
JP (1) JPS5670636A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249209A (ja) * 1984-05-24 1985-12-09 科学技術庁無機材質研究所長 酸化錫膜の電子回路パタ−ンの形成方法
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249209A (ja) * 1984-05-24 1985-12-09 科学技術庁無機材質研究所長 酸化錫膜の電子回路パタ−ンの形成方法
US5607602A (en) * 1995-06-07 1997-03-04 Applied Komatsu Technology, Inc. High-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gas

Also Published As

Publication number Publication date
JPS6234138B2 (enExample) 1987-07-24

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