JPS5667962A - Gate protection circuit of mos field effect transistor - Google Patents

Gate protection circuit of mos field effect transistor

Info

Publication number
JPS5667962A
JPS5667962A JP14462879A JP14462879A JPS5667962A JP S5667962 A JPS5667962 A JP S5667962A JP 14462879 A JP14462879 A JP 14462879A JP 14462879 A JP14462879 A JP 14462879A JP S5667962 A JPS5667962 A JP S5667962A
Authority
JP
Japan
Prior art keywords
gate
junction type
source
fet14
mosfet1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14462879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS622704B2 (enrdf_load_stackoverflow
Inventor
Toru Kuwabara
Hisayoshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14462879A priority Critical patent/JPS5667962A/ja
Publication of JPS5667962A publication Critical patent/JPS5667962A/ja
Publication of JPS622704B2 publication Critical patent/JPS622704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP14462879A 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor Granted JPS5667962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14462879A JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Publications (2)

Publication Number Publication Date
JPS5667962A true JPS5667962A (en) 1981-06-08
JPS622704B2 JPS622704B2 (enrdf_load_stackoverflow) 1987-01-21

Family

ID=15366453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14462879A Granted JPS5667962A (en) 1979-11-07 1979-11-07 Gate protection circuit of mos field effect transistor

Country Status (1)

Country Link
JP (1) JPS5667962A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
JPS6161468A (ja) * 1984-08-31 1986-03-29 Seiko Epson Corp 静電気保護回路
JPS6187357A (ja) * 1984-09-18 1986-05-02 Sanyo Electric Co Ltd 半導体集積回路装置
US6191633B1 (en) 1997-09-12 2001-02-20 Nec Corporation Semiconductor integrated circuit with protection circuit against electrostatic discharge

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
US4952994A (en) * 1984-05-03 1990-08-28 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
US5017985A (en) * 1984-05-03 1991-05-21 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS6161468A (ja) * 1984-08-31 1986-03-29 Seiko Epson Corp 静電気保護回路
JPS6187357A (ja) * 1984-09-18 1986-05-02 Sanyo Electric Co Ltd 半導体集積回路装置
US6191633B1 (en) 1997-09-12 2001-02-20 Nec Corporation Semiconductor integrated circuit with protection circuit against electrostatic discharge

Also Published As

Publication number Publication date
JPS622704B2 (enrdf_load_stackoverflow) 1987-01-21

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