JPS566482A - Light controled semiconductor light emitting element - Google Patents

Light controled semiconductor light emitting element

Info

Publication number
JPS566482A
JPS566482A JP8108479A JP8108479A JPS566482A JP S566482 A JPS566482 A JP S566482A JP 8108479 A JP8108479 A JP 8108479A JP 8108479 A JP8108479 A JP 8108479A JP S566482 A JPS566482 A JP S566482A
Authority
JP
Japan
Prior art keywords
light
light emitting
region
emitting element
controled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8108479A
Other languages
Japanese (ja)
Inventor
Kazuo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8108479A priority Critical patent/JPS566482A/en
Publication of JPS566482A publication Critical patent/JPS566482A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To irradiate and stop the light having any wavelength preset in response to the irradiation and stop of an external light in a light controlled semiconductor light emitting element by forming a light absorbing region for optically shielding both a light switching region and a light emitting region therebetween. CONSTITUTION:A light emitting element consists of a light switching region formed on GaAlAs layers 1, 2, 3, a light absorbing region made of GaAs layer 4, and a light emitting region made of GaAlAs layers 5, 6, 7. When input light (a) is irradiated thereto, the light switching region becomes conductive to supply a current from the bias voltage supply source 14 to the light emitting region to flow a forward current to a PN junction included therein to generate an output light (b) therefrom.
JP8108479A 1979-06-27 1979-06-27 Light controled semiconductor light emitting element Pending JPS566482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8108479A JPS566482A (en) 1979-06-27 1979-06-27 Light controled semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8108479A JPS566482A (en) 1979-06-27 1979-06-27 Light controled semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS566482A true JPS566482A (en) 1981-01-23

Family

ID=13736512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8108479A Pending JPS566482A (en) 1979-06-27 1979-06-27 Light controled semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS566482A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104178A (en) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor element
JPS62281381A (en) * 1986-05-29 1987-12-07 Mitsubishi Cable Ind Ltd Photo-semiconductor element
US4989051A (en) * 1990-02-13 1991-01-29 The Univ. Of Delaware Bi-directional, feed through emitter-detector for optical fiber transmission lines
WO1998045885A1 (en) * 1997-04-08 1998-10-15 3Dv Systems Ltd. Solid state optical shutter
WO2002084358A1 (en) * 2001-04-18 2002-10-24 Infineon Technologies Ag Emission module for an optical signal transmission

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924086A (en) * 1972-06-26 1974-03-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924086A (en) * 1972-06-26 1974-03-04

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104178A (en) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor element
JPH0351115B2 (en) * 1982-12-07 1991-08-05 Kokusai Denshin Denwa Co Ltd
JPS62281381A (en) * 1986-05-29 1987-12-07 Mitsubishi Cable Ind Ltd Photo-semiconductor element
US4989051A (en) * 1990-02-13 1991-01-29 The Univ. Of Delaware Bi-directional, feed through emitter-detector for optical fiber transmission lines
WO1991012633A1 (en) * 1990-02-13 1991-08-22 E.I. Du Pont De Nemours And Company Bi-directional, feed through emitter-detector for optical fiber transmission lines
WO1998045885A1 (en) * 1997-04-08 1998-10-15 3Dv Systems Ltd. Solid state optical shutter
WO2002084358A1 (en) * 2001-04-18 2002-10-24 Infineon Technologies Ag Emission module for an optical signal transmission
US6991381B2 (en) 2001-04-18 2006-01-31 Infineon Technologies Ag Emission module for an optical signal transmission

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