JPS566474A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS566474A JPS566474A JP8228579A JP8228579A JPS566474A JP S566474 A JPS566474 A JP S566474A JP 8228579 A JP8228579 A JP 8228579A JP 8228579 A JP8228579 A JP 8228579A JP S566474 A JPS566474 A JP S566474A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- gate
- mosfet
- accumulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8228579A JPS566474A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8228579A JPS566474A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS566474A true JPS566474A (en) | 1981-01-23 |
JPS6211516B2 JPS6211516B2 (ja) | 1987-03-12 |
Family
ID=13770241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8228579A Granted JPS566474A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566474A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61208270A (ja) * | 1985-03-13 | 1986-09-16 | Matsushita Electronics Corp | Mos型トランジスタ |
US5162882A (en) * | 1990-06-08 | 1992-11-10 | Texas Instruments Incorporated | Semiconductor over insulator mesa |
EP0536688A2 (en) * | 1991-10-08 | 1993-04-14 | Sony Corporation | MOS transistor and charge detector using same |
-
1979
- 1979-06-27 JP JP8228579A patent/JPS566474A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61208270A (ja) * | 1985-03-13 | 1986-09-16 | Matsushita Electronics Corp | Mos型トランジスタ |
US5162882A (en) * | 1990-06-08 | 1992-11-10 | Texas Instruments Incorporated | Semiconductor over insulator mesa |
EP0536688A2 (en) * | 1991-10-08 | 1993-04-14 | Sony Corporation | MOS transistor and charge detector using same |
EP0536688A3 (ja) * | 1991-10-08 | 1994-04-20 | Sony Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS6211516B2 (ja) | 1987-03-12 |
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