JPS566454A - Formation of metal pattern for semiconductor substrate - Google Patents
Formation of metal pattern for semiconductor substrateInfo
- Publication number
- JPS566454A JPS566454A JP8169879A JP8169879A JPS566454A JP S566454 A JPS566454 A JP S566454A JP 8169879 A JP8169879 A JP 8169879A JP 8169879 A JP8169879 A JP 8169879A JP S566454 A JPS566454 A JP S566454A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- metal
- formation
- metal pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a pattern with a T-shaped cross section by dry etching with a halogen-affiliated gas of the first metal film and the second metal film added by metal different in the vapor pressure of the halogenide from the metal, both formed on the semiconductor substrate. CONSTITUTION:The Al film 3 containing Cu, for instance, and the highly pure Al film 4 are formed in sequence on the insulator film 2 made of SiO2 provided on the semiconductor substrate 1 made of Si or the like and the photoresist film 5 with a specified shape thereon. The film 5 undergoes a dry etching with a halogen affiliated gas to form an electrode pattern. As Cu is smaller in the vapor pressure as halogenide than that of Al, the Al film containing Cu is lower in the etching speed than that of the highly pure Al film. Thus, the lower layer is tapered. This facilitates the producing of the electrode pattern with a T-shaped cross section. In place of Al, W and Mo may be used and in place of Cu, Zn, Ni, Fe or the like may be used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8169879A JPS566454A (en) | 1979-06-28 | 1979-06-28 | Formation of metal pattern for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8169879A JPS566454A (en) | 1979-06-28 | 1979-06-28 | Formation of metal pattern for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS566454A true JPS566454A (en) | 1981-01-23 |
Family
ID=13753587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8169879A Pending JPS566454A (en) | 1979-06-28 | 1979-06-28 | Formation of metal pattern for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS566454A (en) |
-
1979
- 1979-06-28 JP JP8169879A patent/JPS566454A/en active Pending
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