JPS5660045A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5660045A JPS5660045A JP13685179A JP13685179A JPS5660045A JP S5660045 A JPS5660045 A JP S5660045A JP 13685179 A JP13685179 A JP 13685179A JP 13685179 A JP13685179 A JP 13685179A JP S5660045 A JPS5660045 A JP S5660045A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- type
- plane
- electrode
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
- H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685179A JPS5660045A (en) | 1979-10-23 | 1979-10-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685179A JPS5660045A (en) | 1979-10-23 | 1979-10-23 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5660045A true JPS5660045A (en) | 1981-05-23 |
JPS6322068B2 JPS6322068B2 (enrdf_load_stackoverflow) | 1988-05-10 |
Family
ID=15184980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13685179A Granted JPS5660045A (en) | 1979-10-23 | 1979-10-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660045A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184555A (ja) * | 1983-04-02 | 1984-10-19 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置およびその製造方法 |
KR101015009B1 (ko) * | 2008-04-18 | 2011-02-16 | 주식회사 케이이씨 | 커패시터 및 그 제조 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5269589A (en) * | 1975-12-08 | 1977-06-09 | Hitachi Ltd | Semiconductor capacity element |
JPS5376686A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor device |
-
1979
- 1979-10-23 JP JP13685179A patent/JPS5660045A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5269589A (en) * | 1975-12-08 | 1977-06-09 | Hitachi Ltd | Semiconductor capacity element |
JPS5376686A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59184555A (ja) * | 1983-04-02 | 1984-10-19 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置およびその製造方法 |
KR101015009B1 (ko) * | 2008-04-18 | 2011-02-16 | 주식회사 케이이씨 | 커패시터 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS6322068B2 (enrdf_load_stackoverflow) | 1988-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52102690A (en) | Semiconductor capacitance device | |
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
JPS57100770A (en) | Switching element | |
JPS5269589A (en) | Semiconductor capacity element | |
JPS53142196A (en) | Bipolar type semiconductor device | |
JPS5660045A (en) | Semiconductor device | |
JPS55124278A (en) | Avalanche photodiode | |
JPS5769778A (en) | Semiconductor device | |
JPS5575264A (en) | Charge transfer element | |
JPS5367388A (en) | Memory semiconductor device | |
JPS56144571A (en) | Capacitor in semiconductor integrated circuit | |
JPS56138946A (en) | Semiconductor device | |
JPS52154390A (en) | Semiconductor device | |
JPS5778181A (en) | Semiconductor variable capacity element | |
GB1208030A (en) | A semiconductor device | |
JPS5710247A (en) | Semiconductor device | |
JPS5287988A (en) | High dielectric strength semiconductor device | |
JPS5575254A (en) | Semiconductor device | |
JPS55151362A (en) | Semiconductor device | |
JPS5779657A (en) | Semiconductor device | |
JPS5376763A (en) | Semiconductor rectifying device | |
JPS577963A (en) | Charge transfer element | |
JPS55148422A (en) | Manufacturing of semiconductor device | |
JPS5353271A (en) | Manufacture for semiconductor device | |
JPS5348484A (en) | Production of semiconductor device |