JPS56144571A - Capacitor in semiconductor integrated circuit - Google Patents

Capacitor in semiconductor integrated circuit

Info

Publication number
JPS56144571A
JPS56144571A JP4841280A JP4841280A JPS56144571A JP S56144571 A JPS56144571 A JP S56144571A JP 4841280 A JP4841280 A JP 4841280A JP 4841280 A JP4841280 A JP 4841280A JP S56144571 A JPS56144571 A JP S56144571A
Authority
JP
Japan
Prior art keywords
layer
capacitance
electrode
emitter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4841280A
Other languages
Japanese (ja)
Inventor
Kuniyasu Asada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP4841280A priority Critical patent/JPS56144571A/en
Publication of JPS56144571A publication Critical patent/JPS56144571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only

Abstract

PURPOSE:To increase capacitance by providing an N layer in a P layer, forming a metal electrode on the N layer through an insulating layer, and connecting said electrode to the P layer. CONSTITUTION:The N epitaxial layer 2 on a P type substrate 1 is separated by a P<+> layer 3, and a P<+> base 10 and an N<+> emitter 6 are successively formed in the N layer 2. A metal electrode 11 is formed connecting with the base 10, and a metal electrode 9 on an insulating layer 8 and the metal layer 11 are connected to each other. The electrode 7 is to be at a positive potential, and the electrodes 9 and 11 to be at negative potentials. In this case, a capacitance C1 exists between the emitter 6 and the electrode 9, and a junction capacitance C2 between the base 10 and the emitter 6, connected therewith in parallel. Accordingly, the capacitance can be increased by means of the junction capacitance without changing the area of the PN junction 12 and the specific inductivity and thickness of the insulating film 8 at all. In other words, a remarkably large capacitance can be obtained without increasing the element dimensions.
JP4841280A 1980-04-11 1980-04-11 Capacitor in semiconductor integrated circuit Pending JPS56144571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4841280A JPS56144571A (en) 1980-04-11 1980-04-11 Capacitor in semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4841280A JPS56144571A (en) 1980-04-11 1980-04-11 Capacitor in semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS56144571A true JPS56144571A (en) 1981-11-10

Family

ID=12802583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4841280A Pending JPS56144571A (en) 1980-04-11 1980-04-11 Capacitor in semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56144571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985104A (en) * 1982-11-05 1984-05-17 Toshiba Corp Oscillator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985104A (en) * 1982-11-05 1984-05-17 Toshiba Corp Oscillator

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