JPS5658258A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5658258A JPS5658258A JP13407179A JP13407179A JPS5658258A JP S5658258 A JPS5658258 A JP S5658258A JP 13407179 A JP13407179 A JP 13407179A JP 13407179 A JP13407179 A JP 13407179A JP S5658258 A JPS5658258 A JP S5658258A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- regions
- layer
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 4
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13407179A JPS5658258A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13407179A JPS5658258A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5658258A true JPS5658258A (en) | 1981-05-21 |
Family
ID=15119691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13407179A Pending JPS5658258A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5658258A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253267A (ja) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
JPH03296224A (ja) * | 1990-04-13 | 1991-12-26 | Seikosha Co Ltd | バイポーラトランジスタ |
-
1979
- 1979-10-16 JP JP13407179A patent/JPS5658258A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253267A (ja) * | 1984-05-29 | 1985-12-13 | Toshiba Corp | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
JPH03296224A (ja) * | 1990-04-13 | 1991-12-26 | Seikosha Co Ltd | バイポーラトランジスタ |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0272453A3 (en) | Merged bipolar/cmos technology using electrically active trench | |
JPS57201070A (en) | Semiconductor device | |
JPS5658258A (en) | Semiconductor integrated circuit | |
JPS5654064A (en) | Semiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS56148863A (en) | Manufacture of semiconductor device | |
JPS54126462A (en) | Production of semiconductor device | |
JPS57199251A (en) | Semiconductor device | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
JPS5696852A (en) | Semiconductor device | |
JPS6415974A (en) | Semiconductor device | |
JPS6482560A (en) | Lateral bipolar transistor | |
JPS5654063A (en) | Semiconductor device | |
JPS6489364A (en) | Manufacture of bipolar semiconductor integrated circuit device | |
JPS575358A (en) | Semiconductor device and manufacture thereof | |
JPS57207350A (en) | Manufacture of semiconductor device | |
JPS5766667A (en) | Semiconductor device | |
JPS5720468A (en) | Semiconductor device | |
JPS5268379A (en) | Semiconductor device | |
JPS57170563A (en) | Semiconductor integrated circuit device | |
JPS56105673A (en) | Semiconductor device | |
JPS54136185A (en) | Semiconductor device | |
JPS5443674A (en) | Semiconductor device and its production | |
JPS5787170A (en) | Semiconductor device | |
JPS5749249A (en) | Semiconductor integrated circuit device |