JPS5443674A - Semiconductor device and its production - Google Patents
Semiconductor device and its productionInfo
- Publication number
- JPS5443674A JPS5443674A JP10988077A JP10988077A JPS5443674A JP S5443674 A JPS5443674 A JP S5443674A JP 10988077 A JP10988077 A JP 10988077A JP 10988077 A JP10988077 A JP 10988077A JP S5443674 A JPS5443674 A JP S5443674A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contact hole
- emitter
- type
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To make a switching operation high-speed with making the base resistance and the collector-emitter capacity small by making the clearance between a base contact hole and an emitter contact hole as small as possible.
CONSTITUTION: P type base area 3 is formed in N type Si substrate 1, which is to be a collector, by diffusion by using SiO2 film 2 as a mask, and N+ type emitter area 4 is provided in area 3. Next, a contact hole for the emitter electrode is provided in SiO2 film 5 generated at this time, and Al film 6 is caused to adhere to the hole, and the hole is covered with Al2O3 film 7. After that, the needless part of film 6 is etched and eliminated by using film 7 as a mask, and insulating film 8 is made grow throughout the face, and film 8 is made invade even under film 7 which is an overhang structure. Next, P type impurity is doped only in the exposed part of film 8, and film 8 is removed and only film 8a just under film 7 is made residual by utilizing the difference of the etching speed. After that, a contact hole for the base electrode is provided in film 2, and Al film 11 is caused to adhere to it.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10988077A JPS5443674A (en) | 1977-09-14 | 1977-09-14 | Semiconductor device and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10988077A JPS5443674A (en) | 1977-09-14 | 1977-09-14 | Semiconductor device and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5443674A true JPS5443674A (en) | 1979-04-06 |
Family
ID=14521501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10988077A Pending JPS5443674A (en) | 1977-09-14 | 1977-09-14 | Semiconductor device and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5443674A (en) |
-
1977
- 1977-09-14 JP JP10988077A patent/JPS5443674A/en active Pending
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