JPS5443674A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS5443674A
JPS5443674A JP10988077A JP10988077A JPS5443674A JP S5443674 A JPS5443674 A JP S5443674A JP 10988077 A JP10988077 A JP 10988077A JP 10988077 A JP10988077 A JP 10988077A JP S5443674 A JPS5443674 A JP S5443674A
Authority
JP
Japan
Prior art keywords
film
contact hole
emitter
type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10988077A
Other languages
Japanese (ja)
Inventor
Atsuo Hotta
Hiroyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10988077A priority Critical patent/JPS5443674A/en
Publication of JPS5443674A publication Critical patent/JPS5443674A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To make a switching operation high-speed with making the base resistance and the collector-emitter capacity small by making the clearance between a base contact hole and an emitter contact hole as small as possible.
CONSTITUTION: P type base area 3 is formed in N type Si substrate 1, which is to be a collector, by diffusion by using SiO2 film 2 as a mask, and N+ type emitter area 4 is provided in area 3. Next, a contact hole for the emitter electrode is provided in SiO2 film 5 generated at this time, and Al film 6 is caused to adhere to the hole, and the hole is covered with Al2O3 film 7. After that, the needless part of film 6 is etched and eliminated by using film 7 as a mask, and insulating film 8 is made grow throughout the face, and film 8 is made invade even under film 7 which is an overhang structure. Next, P type impurity is doped only in the exposed part of film 8, and film 8 is removed and only film 8a just under film 7 is made residual by utilizing the difference of the etching speed. After that, a contact hole for the base electrode is provided in film 2, and Al film 11 is caused to adhere to it.
COPYRIGHT: (C)1979,JPO&Japio
JP10988077A 1977-09-14 1977-09-14 Semiconductor device and its production Pending JPS5443674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10988077A JPS5443674A (en) 1977-09-14 1977-09-14 Semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10988077A JPS5443674A (en) 1977-09-14 1977-09-14 Semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5443674A true JPS5443674A (en) 1979-04-06

Family

ID=14521501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10988077A Pending JPS5443674A (en) 1977-09-14 1977-09-14 Semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5443674A (en)

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