JPS5655083A - Light-drive semiconductor device - Google Patents

Light-drive semiconductor device

Info

Publication number
JPS5655083A
JPS5655083A JP13131779A JP13131779A JPS5655083A JP S5655083 A JPS5655083 A JP S5655083A JP 13131779 A JP13131779 A JP 13131779A JP 13131779 A JP13131779 A JP 13131779A JP S5655083 A JPS5655083 A JP S5655083A
Authority
JP
Japan
Prior art keywords
jig
photothyristor
light
anode terminal
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13131779A
Other languages
English (en)
Inventor
Tsuneo Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13131779A priority Critical patent/JPS5655083A/ja
Publication of JPS5655083A publication Critical patent/JPS5655083A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP13131779A 1979-10-13 1979-10-13 Light-drive semiconductor device Pending JPS5655083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13131779A JPS5655083A (en) 1979-10-13 1979-10-13 Light-drive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13131779A JPS5655083A (en) 1979-10-13 1979-10-13 Light-drive semiconductor device

Publications (1)

Publication Number Publication Date
JPS5655083A true JPS5655083A (en) 1981-05-15

Family

ID=15055115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13131779A Pending JPS5655083A (en) 1979-10-13 1979-10-13 Light-drive semiconductor device

Country Status (1)

Country Link
JP (1) JPS5655083A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008142796A1 (ja) * 2007-05-24 2010-08-05 東芝三菱電機産業システム株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2008142796A1 (ja) * 2007-05-24 2010-08-05 東芝三菱電機産業システム株式会社 半導体装置

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