JPS5655045A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS5655045A JPS5655045A JP13103379A JP13103379A JPS5655045A JP S5655045 A JPS5655045 A JP S5655045A JP 13103379 A JP13103379 A JP 13103379A JP 13103379 A JP13103379 A JP 13103379A JP S5655045 A JPS5655045 A JP S5655045A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polymerized
- adherence
- alpha
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Abstract
PURPOSE:To form a fine pattern by forming a resist film of a lower layer of radiation sensitive high molecular material polymerized in a plasma and an upper layer of radiation sensitive high molecular material polymerized in a solution, thereby improving the adherence and eliminating pinholes. CONSTITUTION:A polymethylmethacrylate (PMMA) 12 polymerized in a plasma is formed on the surface of an oxide film 11 formed on an Si substrate 10, and a copolymer 13 of alpha-cyanoacrylate and alpha-amideacrylate is rotatably coated by a spinner as a solution polymerization film thereon. After the film is preliminarily heated, it is exposed and developed with an electron beam. Since the lower film 12 is thus improved in its adherence with reduced pinholes and the upper layer film 13 is reduced in thickness with high resolution, a fine pattern of an LSI can be readily formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13103379A JPS5655045A (en) | 1979-10-11 | 1979-10-11 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13103379A JPS5655045A (en) | 1979-10-11 | 1979-10-11 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5655045A true JPS5655045A (en) | 1981-05-15 |
Family
ID=15048441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13103379A Pending JPS5655045A (en) | 1979-10-11 | 1979-10-11 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5655045A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0329313A2 (en) * | 1988-02-05 | 1989-08-23 | General Electric Company | Laser patterning using a novel resist |
-
1979
- 1979-10-11 JP JP13103379A patent/JPS5655045A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0329313A2 (en) * | 1988-02-05 | 1989-08-23 | General Electric Company | Laser patterning using a novel resist |
JPH024264A (en) * | 1988-02-05 | 1990-01-09 | General Electric Co (Ge) | Double-layer resist construction and pattern formation |
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