JPS55140836A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS55140836A
JPS55140836A JP4729379A JP4729379A JPS55140836A JP S55140836 A JPS55140836 A JP S55140836A JP 4729379 A JP4729379 A JP 4729379A JP 4729379 A JP4729379 A JP 4729379A JP S55140836 A JPS55140836 A JP S55140836A
Authority
JP
Japan
Prior art keywords
acid
polymer
layer
resist
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4729379A
Other languages
Japanese (ja)
Inventor
Toshisuke Kitakoji
Yasuhiro Yoneda
Tateo Kitamura
Jiro Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4729379A priority Critical patent/JPS55140836A/en
Publication of JPS55140836A publication Critical patent/JPS55140836A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a pattern with superior resolving power, sensitivity and reproductibility by using a resist layer of specified double layer structure in a pattern forming method by applying radiation after preheating. CONSTITUTION:Second resist layer 2 made of polymer A and first resist layer 1 made of resist polymer B are placed on Si substrate 4 covered with SiO2 layer 3. Acid anhydride bonds formed in polymer B of the upper layer in a preheating process are more than 1.5 times as much as those formed on polymer A of the lower layer. Polymers A, B are prepared by adding a radiolysis type acid such as methacrylic acid having a -COOH group and an acid chloride such as methacrylic acid chloride having a -COCl group, and the furmation rate of acid anhydride bonds is adjusted by varying the ratio of the acid and the acid chloride.
JP4729379A 1979-04-19 1979-04-19 Pattern forming method Pending JPS55140836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4729379A JPS55140836A (en) 1979-04-19 1979-04-19 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4729379A JPS55140836A (en) 1979-04-19 1979-04-19 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS55140836A true JPS55140836A (en) 1980-11-04

Family

ID=12771223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4729379A Pending JPS55140836A (en) 1979-04-19 1979-04-19 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS55140836A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395481A (en) * 1980-09-29 1983-07-26 Siemens Aktiengesellschaft Method for the manufacture of resist structures
WO1986001009A1 (en) * 1984-07-23 1986-02-13 Nippon Telegraph And Telephone Corporation Pattern formation
JPS61502079A (en) * 1984-05-03 1986-09-18 ヒユ−ズ・エアクラフト・カンパニ− How to apply poly(methacrylic anhydride) resist to semiconductors
JPH06332181A (en) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> Resist structure and its preparation
WO2000010057A1 (en) * 1998-08-11 2000-02-24 International Business Machines Corporation Single component developer for copolymer resists
US6426177B2 (en) 1998-08-11 2002-07-30 International Business Machines Corporation Single component developer for use with ghost exposure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126273A (en) * 1977-04-12 1978-11-04 Cho Lsi Gijutsu Kenkyu Kumiai Method of producing positive pattern
JPS5432975A (en) * 1977-08-19 1979-03-10 Agency Of Ind Science & Technol Formation method of pattern on resist film and resist film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126273A (en) * 1977-04-12 1978-11-04 Cho Lsi Gijutsu Kenkyu Kumiai Method of producing positive pattern
JPS5432975A (en) * 1977-08-19 1979-03-10 Agency Of Ind Science & Technol Formation method of pattern on resist film and resist film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4395481A (en) * 1980-09-29 1983-07-26 Siemens Aktiengesellschaft Method for the manufacture of resist structures
JPS61502079A (en) * 1984-05-03 1986-09-18 ヒユ−ズ・エアクラフト・カンパニ− How to apply poly(methacrylic anhydride) resist to semiconductors
JPH0150895B2 (en) * 1984-05-03 1989-11-01 Hughes Aircraft Co
WO1986001009A1 (en) * 1984-07-23 1986-02-13 Nippon Telegraph And Telephone Corporation Pattern formation
US4699870A (en) * 1984-07-23 1987-10-13 Nippon Telegraph And Telephone Corporation Patterning method
JPH06332181A (en) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> Resist structure and its preparation
WO2000010057A1 (en) * 1998-08-11 2000-02-24 International Business Machines Corporation Single component developer for copolymer resists
US6270949B1 (en) 1998-08-11 2001-08-07 International Business Machines Corporation Single component developer for copolymer resists
US6426177B2 (en) 1998-08-11 2002-07-30 International Business Machines Corporation Single component developer for use with ghost exposure

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