JPS5651871A - Manufacture of complementary type mos semiconductor device - Google Patents

Manufacture of complementary type mos semiconductor device

Info

Publication number
JPS5651871A
JPS5651871A JP12803179A JP12803179A JPS5651871A JP S5651871 A JPS5651871 A JP S5651871A JP 12803179 A JP12803179 A JP 12803179A JP 12803179 A JP12803179 A JP 12803179A JP S5651871 A JPS5651871 A JP S5651871A
Authority
JP
Japan
Prior art keywords
film
region
films
sio2
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12803179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155783B2 (enrdf_load_stackoverflow
Inventor
Junichi Ochiai
Hiroyuki Muto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12803179A priority Critical patent/JPS5651871A/ja
Publication of JPS5651871A publication Critical patent/JPS5651871A/ja
Publication of JPS6155783B2 publication Critical patent/JPS6155783B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP12803179A 1979-10-05 1979-10-05 Manufacture of complementary type mos semiconductor device Granted JPS5651871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12803179A JPS5651871A (en) 1979-10-05 1979-10-05 Manufacture of complementary type mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12803179A JPS5651871A (en) 1979-10-05 1979-10-05 Manufacture of complementary type mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS5651871A true JPS5651871A (en) 1981-05-09
JPS6155783B2 JPS6155783B2 (enrdf_load_stackoverflow) 1986-11-29

Family

ID=14974788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12803179A Granted JPS5651871A (en) 1979-10-05 1979-10-05 Manufacture of complementary type mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5651871A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148369A (ja) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Ｍｏｓトランジスタの製造方法
JPS6094379U (ja) * 1983-12-01 1985-06-27 三菱電機株式会社 プロセスライン用フラツシユ溶接機

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59148369A (ja) * 1983-02-10 1984-08-25 シ−メンス，アクチエンゲゼルシヤフト Ｍｏｓトランジスタの製造方法
JPS6094379U (ja) * 1983-12-01 1985-06-27 三菱電機株式会社 プロセスライン用フラツシユ溶接機

Also Published As

Publication number Publication date
JPS6155783B2 (enrdf_load_stackoverflow) 1986-11-29

Similar Documents

Publication Publication Date Title
JPS57196573A (en) Manufacture of mos type semiconductor device
JPS5633822A (en) Preparation of semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5736842A (en) Semiconductor integrated circuit device
JPS5633881A (en) Manufacture of semiconductor device
JPS5651871A (en) Manufacture of complementary type mos semiconductor device
JPS57107067A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
GB1328018A (en) Method of winding a mos transistor in the surface of a substrate
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS6430270A (en) Manufacture of insulated-gate semiconductor device
JPS5638838A (en) Manufacture of semiconductor device
JPS5748248A (en) Manufacture of semiconductor device
JPS6490562A (en) Manufacture of semiconductor storage device
JPS57192077A (en) Semiconductor device
JPS56115570A (en) Manufacture of semiconductor device
JPS55124268A (en) Junction type field effect transistor and method of fabricating the same
JPS57192078A (en) Manufacture of mos semiconductor device
JPS5753958A (ja) Handotaisochi
JPS55151332A (en) Fabricating method of semiconductor device
JPS6449268A (en) Manufacture of semiconductor device
JPS6412575A (en) Manufacture of mos semiconductor device
JPS5680169A (en) Manufacture of semiconductor device
JPS5599778A (en) Insulated-gate type field effect transistor
JPS5613772A (en) Preparation of semiconductor device