JPS5649565A - Semiconductor memory unit manufacturing method - Google Patents
Semiconductor memory unit manufacturing methodInfo
- Publication number
- JPS5649565A JPS5649565A JP12722980A JP12722980A JPS5649565A JP S5649565 A JPS5649565 A JP S5649565A JP 12722980 A JP12722980 A JP 12722980A JP 12722980 A JP12722980 A JP 12722980A JP S5649565 A JPS5649565 A JP S5649565A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- prepared
- capacity
- gate electrode
- pile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To improve an integration degree by a method wherein on the insulating film of a semiconductor substrate one electrode of a capacity element is selectively prepared and on another part adjacent thereto an MISFET gate electrode is prepared through the insulating film. CONSTITUTION:An opening is made to the SiO2 film 2' of an n<-> type substrate to selectively form polysilicon 3. Being B-diffused a p<+> source 4, a capacity element electrode 3', a bit line 3' are formed and covered with SiO2 3''. Next an FET gate electrode 5 of conductive polysilicon is prepared to pile on the source 4 and the electrode 3, further a word line 6 of Al is prepared to be connected C1, C2 with the electrode 5. Said constitution allows it to pile up the capacity electrode 3' and the FET gate electrode 5 excluding the FET drain to get a memory cell having a small occupying area. Said unit is capable of high-speed working and has a big memorizing capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55127229A JPS592188B2 (en) | 1980-09-16 | 1980-09-16 | Manufacturing method of semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55127229A JPS592188B2 (en) | 1980-09-16 | 1980-09-16 | Manufacturing method of semiconductor memory device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50066563A Division JPS51142932A (en) | 1975-06-04 | 1975-06-04 | Semiconductor memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649565A true JPS5649565A (en) | 1981-05-06 |
| JPS592188B2 JPS592188B2 (en) | 1984-01-17 |
Family
ID=14954918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55127229A Expired JPS592188B2 (en) | 1980-09-16 | 1980-09-16 | Manufacturing method of semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS592188B2 (en) |
-
1980
- 1980-09-16 JP JP55127229A patent/JPS592188B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS592188B2 (en) | 1984-01-17 |
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