JPS5646580A - Josephson element - Google Patents

Josephson element

Info

Publication number
JPS5646580A
JPS5646580A JP12237679A JP12237679A JPS5646580A JP S5646580 A JPS5646580 A JP S5646580A JP 12237679 A JP12237679 A JP 12237679A JP 12237679 A JP12237679 A JP 12237679A JP S5646580 A JPS5646580 A JP S5646580A
Authority
JP
Japan
Prior art keywords
forming
junction
substrate
width
superconductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12237679A
Other languages
Japanese (ja)
Inventor
Tadao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12237679A priority Critical patent/JPS5646580A/en
Publication of JPS5646580A publication Critical patent/JPS5646580A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To obtain a Josephson element having stable characteristics by forming an infinitesimal step having predetermined value on a substrate when forming a Josephson element on the substrate and forming a junction at the side wall of the step by covering a superconductive film while reducing the width of the step portion from the upper step to the lower step. CONSTITUTION:Upper and lower step portions 41, 42 are formed on a substrate 4a of semiconductor or the like becoming insulator in the operating state such as made of glass, sapphire while forming a step 43 having prescribed height, namely prescribed length in the junction. A superconductive film 1a made of niobium, lead or the like is covered on the upper step 41, and a superconductive film 2a made of the same material is covered on the lower step 42, and the width of the step 43 is reduced while integrating them. Thus, a junction 3a having prescribed sizes of the width d and the heihgt l can be formed at the step 43, and the reproducibility of the element becomes preferable.
JP12237679A 1979-09-21 1979-09-21 Josephson element Pending JPS5646580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12237679A JPS5646580A (en) 1979-09-21 1979-09-21 Josephson element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12237679A JPS5646580A (en) 1979-09-21 1979-09-21 Josephson element

Publications (1)

Publication Number Publication Date
JPS5646580A true JPS5646580A (en) 1981-04-27

Family

ID=14834299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12237679A Pending JPS5646580A (en) 1979-09-21 1979-09-21 Josephson element

Country Status (1)

Country Link
JP (1) JPS5646580A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940641A (en) * 1982-08-31 1984-03-06 Toshiba Corp Negative type photoresist composition used for high resolution image
US5424281A (en) * 1987-07-03 1995-06-13 Hitachi, Ltd. Oxide-superconduction grain boundary tunneling device
US5438036A (en) * 1992-04-17 1995-08-01 Sumitomo Electric Industries, Ltd. Planar squid of oxide superconductor
US5612545A (en) * 1991-12-23 1997-03-18 Sumitomo Electric Industries, Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
USRE37587E1 (en) * 1990-12-28 2002-03-19 Sumitomo Electric Industries Ltd. Superconducting quantum interference device formed of oxide superconductor thin film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940641A (en) * 1982-08-31 1984-03-06 Toshiba Corp Negative type photoresist composition used for high resolution image
JPH0544663B2 (en) * 1982-08-31 1993-07-07 Toshiba Kk
US5424281A (en) * 1987-07-03 1995-06-13 Hitachi, Ltd. Oxide-superconduction grain boundary tunneling device
USRE37587E1 (en) * 1990-12-28 2002-03-19 Sumitomo Electric Industries Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
US5612545A (en) * 1991-12-23 1997-03-18 Sumitomo Electric Industries, Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
US5438036A (en) * 1992-04-17 1995-08-01 Sumitomo Electric Industries, Ltd. Planar squid of oxide superconductor

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