JPS5643741A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS5643741A
JPS5643741A JP11899879A JP11899879A JPS5643741A JP S5643741 A JPS5643741 A JP S5643741A JP 11899879 A JP11899879 A JP 11899879A JP 11899879 A JP11899879 A JP 11899879A JP S5643741 A JPS5643741 A JP S5643741A
Authority
JP
Japan
Prior art keywords
scrive
film
region
alumina
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11899879A
Other languages
Japanese (ja)
Inventor
Kenzo Yamanari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11899879A priority Critical patent/JPS5643741A/en
Publication of JPS5643741A publication Critical patent/JPS5643741A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To minimize a crack at the cutting off time, and to reduce the generation of a wrong device by a method wherein a portion without alumina films is provided within a specific distance from the scrive lines of the semiconductor wafers that the alumina film is formed in the scrive region. CONSTITUTION:An Al2O3 film 3 is formed in the scrive region of a semiconductor wafer 1 for an electric characteristic, a manufacture process, or a coot reduction. The portion without the Al2O3 film is arranged symmetrically at the both sides from the scrive control line 4 as a symmetric, pallarel and a strip region 5. In this case, the width of almina film 3 in the scrive region 2 is determined less than 100mu. The portion without the alumina film may be arranged in a check pattern. Thus, the generation of wrong device can be prevented.
JP11899879A 1979-09-17 1979-09-17 Semiconductor wafer Pending JPS5643741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11899879A JPS5643741A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11899879A JPS5643741A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5643741A true JPS5643741A (en) 1981-04-22

Family

ID=14750463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11899879A Pending JPS5643741A (en) 1979-09-17 1979-09-17 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5643741A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125040A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Semiconductor device
JPS61150268A (en) * 1984-12-24 1986-07-08 Hitachi Ltd Manufacture of semiconductor device
JPS6373536A (en) * 1986-09-16 1988-04-04 Seiko Epson Corp Semiconductor integrated circuit
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
JPH03139862A (en) * 1989-10-25 1991-06-14 Fujitsu Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61125040A (en) * 1984-11-22 1986-06-12 Hitachi Ltd Semiconductor device
JPS61150268A (en) * 1984-12-24 1986-07-08 Hitachi Ltd Manufacture of semiconductor device
JPS6373536A (en) * 1986-09-16 1988-04-04 Seiko Epson Corp Semiconductor integrated circuit
EP0343720A2 (en) * 1988-05-23 1989-11-29 Koninklijke Philips Electronics N.V. Semiconductor wafer and method of dividing it
JPH0296351A (en) * 1988-05-23 1990-04-09 Philips Gloeilampenfab:Nv Semiconductor wafer and its manufacture
JPH0557737B2 (en) * 1988-05-23 1993-08-24 Philips Nv
JPH03139862A (en) * 1989-10-25 1991-06-14 Fujitsu Ltd Semiconductor device

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