JPS5638828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5638828A
JPS5638828A JP11501779A JP11501779A JPS5638828A JP S5638828 A JPS5638828 A JP S5638828A JP 11501779 A JP11501779 A JP 11501779A JP 11501779 A JP11501779 A JP 11501779A JP S5638828 A JPS5638828 A JP S5638828A
Authority
JP
Japan
Prior art keywords
laser beam
heat oxidation
region
irradiating
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11501779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639371B2 (https=
Inventor
Seiji Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11501779A priority Critical patent/JPS5638828A/ja
Publication of JPS5638828A publication Critical patent/JPS5638828A/ja
Publication of JPS639371B2 publication Critical patent/JPS639371B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP11501779A 1979-09-07 1979-09-07 Manufacture of semiconductor device Granted JPS5638828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11501779A JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11501779A JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5638828A true JPS5638828A (en) 1981-04-14
JPS639371B2 JPS639371B2 (https=) 1988-02-29

Family

ID=14652182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11501779A Granted JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638828A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136334A (en) * 1981-02-18 1982-08-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS59189965U (ja) * 1983-06-03 1984-12-17 ウツエバルブ株式会社 低差圧リフト逆止弁のチヤタリング防止装置
JPS61220339A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220340A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法
JPS61220341A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
US4994399A (en) * 1989-05-16 1991-02-19 Fujitsu Limited Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2010245316A (ja) * 2009-04-07 2010-10-28 Sumco Corp エピタキシャルウェーハの製造方法
JP2012134516A (ja) * 2006-07-27 2012-07-12 Siltronic Ag 単結晶半導体ウェーハの製造方法
CN119521858A (zh) * 2024-11-26 2025-02-25 横店集团东磁股份有限公司 钝化接触太阳能电池及其制备方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS57136334A (en) * 1981-02-18 1982-08-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59189965U (ja) * 1983-06-03 1984-12-17 ウツエバルブ株式会社 低差圧リフト逆止弁のチヤタリング防止装置
JPS61220339A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220340A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法
JPS61220341A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
US4994399A (en) * 1989-05-16 1991-02-19 Fujitsu Limited Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
JP2012134516A (ja) * 2006-07-27 2012-07-12 Siltronic Ag 単結晶半導体ウェーハの製造方法
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2016119490A (ja) * 2008-03-26 2016-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9633892B2 (en) 2008-03-26 2017-04-25 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced and method for manufacturing semiconductor device
JP2010245316A (ja) * 2009-04-07 2010-10-28 Sumco Corp エピタキシャルウェーハの製造方法
CN119521858A (zh) * 2024-11-26 2025-02-25 横店集团东磁股份有限公司 钝化接触太阳能电池及其制备方法

Also Published As

Publication number Publication date
JPS639371B2 (https=) 1988-02-29

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