JPS5633871A - Clock driver circuit - Google Patents
Clock driver circuitInfo
- Publication number
- JPS5633871A JPS5633871A JP11008379A JP11008379A JPS5633871A JP S5633871 A JPS5633871 A JP S5633871A JP 11008379 A JP11008379 A JP 11008379A JP 11008379 A JP11008379 A JP 11008379A JP S5633871 A JPS5633871 A JP S5633871A
- Authority
- JP
- Japan
- Prior art keywords
- capacity
- mosc
- injected
- contact
- mos structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
Abstract
PURPOSE:To prevent electric charges from being injected into a substrate through the capacity in a MOS structure and P-n junction formed between a drain region and the subtrate by a method wherein the connecting direction in which the capacity in the MOS structure used as a boosting capacity is properly arranged. CONSTITUTION:The capacity (MOSC) 9a in the MOS structure is connected on the gate side to a contact 12, and one source and drain structure sides to a contact 7. When a clock pulse inversion phi rises, the electric potential at the cotact 12 is translated in a moment by MOSC 9a from the earth potential E to a load. However, the source and the drain regions 23, 24 of MOSC 9a are connected to the contact 7 at which potential never becomes negative, so that electrons are injected into the P type semiconductor substrate 22 through a diode 14 only, whose dimension is comparatively small and accordingly a small amount of electrons are injected into the substrate 22.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11008379A JPS5633871A (en) | 1979-08-28 | 1979-08-28 | Clock driver circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11008379A JPS5633871A (en) | 1979-08-28 | 1979-08-28 | Clock driver circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5633871A true JPS5633871A (en) | 1981-04-04 |
Family
ID=14526591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11008379A Pending JPS5633871A (en) | 1979-08-28 | 1979-08-28 | Clock driver circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633871A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180066031A (en) | 2015-09-03 | 2018-06-18 | 가부시끼가이샤 도시바 | Voltage variation suppression apparatus and method |
-
1979
- 1979-08-28 JP JP11008379A patent/JPS5633871A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180066031A (en) | 2015-09-03 | 2018-06-18 | 가부시끼가이샤 도시바 | Voltage variation suppression apparatus and method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5362989A (en) | Semiconductor memory device | |
JPS55156370A (en) | Manufacture of semiconductor device | |
WO1984002607A3 (en) | Integrated circuit voltage multiplier | |
JPS5333076A (en) | Production of mos type integrated circuit | |
JPS5433679A (en) | Semiconductor intergrated circuit on insulation substrate | |
JPS56162860A (en) | Semiconductor device | |
JPS5633871A (en) | Clock driver circuit | |
JPS52156580A (en) | Semiconductor integrated circuit device and its production | |
JPS52100979A (en) | Production and drive of dual gate schottky barrier gate type fieled ef fect transistor | |
JPS5548957A (en) | Semiconductor logic element | |
JPS5543864A (en) | Mis semiconductor device | |
JPS5588372A (en) | Lateral type transistor | |
JPS5518006A (en) | Mos-type dynamic memory | |
JPS57166067A (en) | Bias generating unit for substrate | |
JPS5482178A (en) | Electrostatic inductive intergrated circuit device | |
JPS53105985A (en) | Conmplementary-type insulating gate field effect transistor | |
JPS5377476A (en) | Semiconductor integrated circuit device | |
JPS556856A (en) | Semiconductor integrated circuit | |
JPS52149988A (en) | Semiconductor device | |
JPS57121271A (en) | Field effect transistor | |
JPS57192044A (en) | Semiconductor device | |
JPS5736854A (en) | Integrated circuit device | |
JPS5350985A (en) | Semiconductor memory device | |
JPS5439585A (en) | Semiconductor memory device | |
JPS5627954A (en) | Semiconductor device |